Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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1,500
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Diodes Incorporated MOSFET P-CH 20V 89A POWERDI3333 - Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN PowerDI3333-8 2.2W (Ta) P-Channel 20V 89A (Tc) 4 mOhm @ 15A, 4.5V 900mV @ 250µA 125nC @ 10V 4670pF @ 10V 1.8V, 4.5V ±10V
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3,820
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Diodes Incorporated MOSFET P-CH 20V 89A POWERDI3333 - Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN PowerDI3333-8 2.2W (Ta) P-Channel 20V 89A (Tc) 4 mOhm @ 15A, 4.5V 900mV @ 250µA 125nC @ 10V 4670pF @ 10V 1.8V, 4.5V ±10V
SI8425DB-T1-E1
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3,498
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Vishay Siliconix MOSFET P-CH 20V MICROFOOT TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 4-UFBGA, WLCSP 4-WLCSP (1.6x1.6) 1.1W (Ta), 2.7W (Tc) P-Channel 20V - 23 mOhm @ 2A, 4.5V 900mV @ 250µA 110nC @ 10V 2800pF @ 10V 1.8V, 4.5V ±10V
SI8425DB-T1-E1
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1,754
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Vishay Siliconix MOSFET P-CH 20V MICROFOOT TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 4-UFBGA, WLCSP 4-WLCSP (1.6x1.6) 1.1W (Ta), 2.7W (Tc) P-Channel 20V - 23 mOhm @ 2A, 4.5V 900mV @ 250µA 110nC @ 10V 2800pF @ 10V 1.8V, 4.5V ±10V
SI8425DB-T1-E1
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1,865
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Vishay Siliconix MOSFET P-CH 20V MICROFOOT TrenchFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 4-UFBGA, WLCSP 4-WLCSP (1.6x1.6) 1.1W (Ta), 2.7W (Tc) P-Channel 20V - 23 mOhm @ 2A, 4.5V 900mV @ 250µA 110nC @ 10V 2800pF @ 10V 1.8V, 4.5V ±10V
DMN2020UFCL-7
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3,570
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Diodes Incorporated MOSFET N-CH 20V 9A 6DFN - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-PowerUFDFN X1-DFN1616-6 (Type E) 610mW (Ta) N-Channel 20V 9A (Ta) 14 mOhm @ 9A, 4.5V 900mV @ 250µA 21.5nC @ 4.5V 1788pF @ 10V 1.8V, 4.5V ±10V
DMN2020UFCL-7
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3,549
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Diodes Incorporated MOSFET N-CH 20V 9A 6DFN - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-PowerUFDFN X1-DFN1616-6 (Type E) 610mW (Ta) N-Channel 20V 9A (Ta) 14 mOhm @ 9A, 4.5V 900mV @ 250µA 21.5nC @ 4.5V 1788pF @ 10V 1.8V, 4.5V ±10V
DMN2020UFCL-7
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3,853
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Diodes Incorporated MOSFET N-CH 20V 9A 6DFN - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-PowerUFDFN X1-DFN1616-6 (Type E) 610mW (Ta) N-Channel 20V 9A (Ta) 14 mOhm @ 9A, 4.5V 900mV @ 250µA 21.5nC @ 4.5V 1788pF @ 10V 1.8V, 4.5V ±10V