Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SI1405DL-T1-E3
RFQ
VIEW
RFQ
919
In-stock
Vishay Siliconix MOSFET P-CH 8V 1.6A SC-70-6 TrenchFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-TSSOP, SC-88, SOT-363 SC-70-6 (SOT-363) 568mW (Ta) P-Channel - 8V 1.6A (Ta) 125 mOhm @ 1.8A, 4.5V 450mV @ 250µA (Min) 7nC @ 4.5V - 1.8V, 4.5V ±8V
CSD25483F4T
RFQ
VIEW
RFQ
3,601
In-stock
Texas Instruments MOSFET P-CH 20V LGA FemtoFET™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 3-XFDFN 3-PICOSTAR 500mW (Ta) P-Channel - 20V 1.6A (Ta) 205 mOhm @ 500mA, 8V 1.2V @ 250µA 0.96nC @ 4.5V 198pF @ 10V 1.8V, 4.5V -12V
CSD25483F4
RFQ
VIEW
RFQ
1,075
In-stock
Texas Instruments MOSFET P-CH 20V LGA NexFET™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 3-XFDFN 3-PICOSTAR 500mW (Ta) P-Channel - 20V 1.6A (Ta) 205 mOhm @ 500mA, 8V 1.2V @ 250µA 0.959nC @ 4.5V 198pF @ 10V 1.8V, 4.5V -12V
CSD13201W10
RFQ
VIEW
RFQ
979
In-stock
Texas Instruments MOSFET N-CH 12V 1.6A 4DSBGA NexFET™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 4-UFBGA, DSBGA 4-DSBGA (1x1) 1.2W (Ta) N-Channel - 12V 1.6A (Ta) 34 mOhm @ 1A, 4.5V 1.1V @ 250µA 2.9nC @ 4.5V 462pF @ 6V 1.8V, 4.5V ±8V