Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SIR882DP-T1-GE3
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Vishay Siliconix MOSFET N-CH 100V 60A PPAK SO-8 TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 5.4W (Ta), 83W (Tc) N-Channel - 100V 60A (Tc) 8.7 mOhm @ 20A, 10V 2.8V @ 250µA 58nC @ 10V 1930pF @ 50V 4.5V, 10V ±20V
SIR882DP-T1-GE3
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2,123
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Vishay Siliconix MOSFET N-CH 100V 60A PPAK SO-8 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 5.4W (Ta), 83W (Tc) N-Channel - 100V 60A (Tc) 8.7 mOhm @ 20A, 10V 2.8V @ 250µA 58nC @ 10V 1930pF @ 50V 4.5V, 10V ±20V
SIR882DP-T1-GE3
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1,837
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Vishay Siliconix MOSFET N-CH 100V 60A PPAK SO-8 TrenchFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 5.4W (Ta), 83W (Tc) N-Channel - 100V 60A (Tc) 8.7 mOhm @ 20A, 10V 2.8V @ 250µA 58nC @ 10V 1930pF @ 50V 4.5V, 10V ±20V