Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
GP1M008A050CG
RFQ
VIEW
RFQ
1,622
In-stock
Global Power Technologies Group MOSFET N-CH 500V 8A DPAK - Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 120W (Tc) N-Channel 500V 8A (Tc) 850 mOhm @ 4A, 10V 5V @ 250µA 21nC @ 10V 937pF @ 25V 10V ±30V
Default Photo
RFQ
VIEW
RFQ
2,194
In-stock
Infineon Technologies MOSFET NCH 650V 54A PG-HDSOP-10 CoolMOS™ G7 Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 10-PowerSOP Module PG-HDSOP-10-1 120W (Tc) N-Channel 600V 20A (Tc) 125 mOhm @ 6.4A, 10V 4V @ 320µA 27nC @ 10V 1080pF @ 400V 10V ±20V
IPT60R125G7XTMA1
RFQ
VIEW
RFQ
3,545
In-stock
Infineon Technologies MOSFET N-CH 650V 20A HSOF-8 CoolMOS™ G7 Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerSFN PG-HSOF-8 120W (Tc) N-Channel 650V 20A (Tc) 125 mOhm @ 6.4A, 10V 4V @ 320µA 27nC @ 10V 1080pF @ 400V 10V ±20V
TSM70N10CP ROG
RFQ
VIEW
RFQ
862
In-stock
Taiwan Semiconductor Corporation MOSFET N-CHANNEL 100V 70A TO252 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252, (D-Pak) 120W (Tc) N-Channel 100V 70A (Tc) 13 mOhm @ 30A, 10V 4V @ 250µA 145nC @ 10V 4300pF @ 30V 10V ±20V