- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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13 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,199
In-stock
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Infineon Technologies | MOSFET N-CH TO263-3 | CoolMOS™ C7 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 72W (Tc) | N-Channel | - | 650V | 13A (Tc) | 190 mOhm @ 5.7A, 10V | 4V @ 290µA | 23nC @ 10V | 1150pF @ 400V | 10V | ±20V | |||
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3,822
In-stock
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Infineon Technologies | MOSFET N-CH 650V 13A TO263-3 | CoolMOS™ C7 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA | PG-TO263-3 | 68W (Tc) | N-Channel | - | 650V | 13A (Tc) | 130 mOhm @ 5.3A, 10V | 4V @ 260µA | 24nC @ 10V | 1080pF @ 400V | 10V | ±20V | |||
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1,142
In-stock
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Infineon Technologies | MOSFET N-CH 650V 11A TO-263-3 | CoolMOS™ C7 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 63W (Tc) | N-Channel | - | 650V | 11A (Tc) | 225 mOhm @ 4.8A, 10V | 4V @ 240µA | 20nC @ 10V | 996pF @ 400V | 10V | ±20V | |||
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843
In-stock
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Infineon Technologies | MOSFET N-CH 650V 11A TO252-3 | CoolMOS™ C7 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 63W (Tc) | N-Channel | - | 650V | 11A (Tc) | 225 mOhm @ 4.8A, 10V | 4V @ 240µA | 20nC @ 10V | 996pF @ 400V | 10V | ±20V | |||
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3,014
In-stock
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Infineon Technologies | MOSFET N-CH 650V 19A TO263-3 | CoolMOS™ C7 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA | PG-TO263-3 | 92W (Tc) | N-Channel | - | 650V | 19A (Tc) | 120 mOhm @ 7.8A, 10V | 4V @ 390µA | 34nC @ 10V | 1500pF @ 400V | 10V | ±20V | |||
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684
In-stock
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Infineon Technologies | HIGH POWER_NEW | CoolMOS™ C7 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerSFN | PG-HSOF-8-2 | 97W (Tc) | N-Channel | - | 650V | 14A (Tc) | 195 mOhm @ 4.8A, 10V | 4V @ 240µA | 20nC @ 10V | 996pF @ 400V | 10V | ±20V | |||
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3,364
In-stock
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Infineon Technologies | MOSFET N-CH 650V 69A HSOF-8 | CoolMOS™ C7 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerSFN | PG-HSOF-8 | 391W (Tc) | N-Channel | - | 650V | 69A (Tc) | 33 mOhm @ 28.9A, 10V | 4V @ 1.44mA | 110nC @ 10V | 5000pF @ 400V | 10V | ±20V | |||
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1,616
In-stock
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Infineon Technologies | MOSFET N-CH 650V 13A TO-252 | CoolMOS™ C7 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 72W (Tc) | N-Channel | - | 650V | 13A (Tc) | 190 mOhm @ 5.7A, 10V | 4V @ 290µA | 23nC @ 10V | 1150pF @ 400V | 10V | ±20V | |||
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1,716
In-stock
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Infineon Technologies | MOSFET N-CH 650V 50A TO263-3 | CoolMOS™ C7 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA | PG-TO263-3 | 227W (Tc) | N-Channel | - | 650V | 50A (Tc) | 40 mOhm @ 24.9A, 10V | 4V @ 1.24mA | 107nC @ 10V | 4340pF @ 400V | 10V | ±20V | |||
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3,756
In-stock
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Infineon Technologies | MOSFET N-CH 650V 35A TO263-3 | CoolMOS™ C7 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA | PG-TO263-3 | 162W (Tc) | N-Channel | - | 650V | 35A (Tc) | 60 mOhm @ 15.9A, 10V | 4V @ 800µA | 68nC @ 10V | 2850pF @ 400V | 10V | ±20V | |||
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619
In-stock
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Infineon Technologies | HIGH POWER_NEW | CoolMOS™ C7 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerSFN | PG-HSOF-8-2 | 156W (Tc) | N-Channel | - | 650V | 24A (Tc) | 105 mOhm @ 8.9A, 10V | 4V @ 440µA | 35nC @ 10V | 1670pF @ 400V | 10V | ±20V | |||
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2,281
In-stock
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Infineon Technologies | MOSFET N-CH 650V 22A TO263-3 | CoolMOS™ C7 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA | PG-TO263-3 | 110W (Tc) | N-Channel | - | 650V | 22A (Tc) | 99 mOhm @ 9.7A, 10V | 4V @ 490µA | 42nC @ 10V | 1819pF @ 400V | 10V | ±20V | |||
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2,500
In-stock
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Infineon Technologies | MOSFET N-CH 650V 46A TO-263-3 | CoolMOS™ C7 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 227W (Tc) | N-Channel | - | 650V | 46A (Tc) | 45 mOhm @ 24.9A, 10V | 4V @ 1.25mA | 93nC @ 10V | 4340pF @ 400V | 10V | ±20V |