- Series :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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- Input Capacitance (Ciss) (Max) @ Vds :
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3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,704
In-stock
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ON Semiconductor | MOSFET P-CH 150V 3A MLP 3.3SQ | QFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-MLP (3.3x3.3) | 42W (Tc) | P-Channel | 150V | 3A (Tc) | 1.5 Ohm @ 1.5A, 10V | 5V @ 250µA | 9nC @ 10V | 270pF @ 25V | 10V | ±30V | |||
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VIEW |
3,367
In-stock
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ON Semiconductor | MOSFET N-CH 220V 1A 3.3SQ MLP | UniFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-MLP (3.3x3.3) | 2.1W (Ta), 42W (Tc) | N-Channel | 220V | 1A (Ta), 7A (Tc) | 366 mOhm @ 1A, 10V | 4V @ 250µA | 18nC @ 10V | 1180pF @ 100V | 10V | ±20V | |||
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VIEW |
694
In-stock
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ON Semiconductor | MOSFET N-CH 55V 2.4A MLP | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-MLP (3.3x3.3) | 2.3W (Ta), 35W (Tc) | N-Channel | 55V | 2.4A (Ta), 15A (Tc) | 900 mOhm @ 15A, 10V | 4V @ 250µA | 11.5nC @ 10V | 350pF @ 25V | 10V | ±20V |