Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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VS-FB180SA10P
RFQ
VIEW
RFQ
1,500
In-stock
Vishay Semiconductor Diodes Division MOSFET N-CH 100V 180A SOT-227 - Obsolete Bulk MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227 480W (Tc) N-Channel - 100V 180A (Tc) 6.5 mOhm @ 180A, 10V 4V @ 250µA 380nC @ 10V 10700pF @ 25V 10V ±20V
IXTQ30N60L2
RFQ
VIEW
RFQ
1,137
In-stock
IXYS MOSFET N-CH 600V 30A TO-3P Linear L2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 540W (Tc) N-Channel - 600V 30A (Tc) 240 mOhm @ 15A, 10V 4.5V @ 250µA 335nC @ 10V 10700pF @ 25V 10V ±20V
FB180SA10
RFQ
VIEW
RFQ
2,764
In-stock
Vishay Semiconductor Diodes Division MOSFET N-CH 100V 180A SOT-227 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227 480W (Tc) N-Channel - 100V 180A (Tc) 6.5 mOhm @ 108A, 10V 4V @ 250µA 380nC @ 10V 10700pF @ 25V 10V ±20V
VS-FB190SA10
RFQ
VIEW
RFQ
833
In-stock
Vishay Semiconductor Diodes Division MOSFET N-CH 100V 190A SOT227 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227 568W (Tc) N-Channel - 100V 190A 6.5 mOhm @ 180A, 10V 4.35V @ 250µA 250nC @ 10V 10700pF @ 25V 10V ±20V
IXTT30N60L2
RFQ
VIEW
RFQ
3,056
In-stock
IXYS MOSFET N-CH 600V 30A TO-268 Linear L2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268 540W (Tc) N-Channel - 600V 30A (Tc) 240 mOhm @ 15A, 10V 4.5V @ 250µA 335nC @ 10V 10700pF @ 25V 10V ±20V
IXTH30N60L2
RFQ
VIEW
RFQ
3,597
In-stock
IXYS MOSFET N-CH 600V 30A TO-247 Linear L2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 540W (Tc) N-Channel - 600V 30A (Tc) 240 mOhm @ 15A, 10V 4.5V @ 250µA 335nC @ 10V 10700pF @ 25V 10V ±20V