Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
APT45M100J
RFQ
VIEW
RFQ
2,944
In-stock
Microsemi Corporation MOSFET N-CH 1000V 45A SOT-227 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227 960W (Tc) N-Channel 1000V 45A (Tc) 180 mOhm @ 33A, 10V 5V @ 2.5mA 570nC @ 10V 18500pF @ 25V 10V ±30V
APT58M80J
RFQ
VIEW
RFQ
1,771
In-stock
Microsemi Corporation MOSFET N-CH 800V 58A SOT-227 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227 960W (Tc) N-Channel 800V 60W (Tc) 110 mOhm @ 43A, 10V 5V @ 5mA 570nC @ 10V 17550pF @ 25V 10V ±30V
APT41F100J
RFQ
VIEW
RFQ
3,903
In-stock
Microsemi Corporation MOSFET N-CH 1000V 41A SOT-227 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC ISOTOP® 960W (Tc) N-Channel 1000V 42A (Tc) 210 mOhm @ 33A, 10V 5V @ 5mA 570nC @ 10V 18500pF @ 25V 10V ±30V
APT53F80J
RFQ
VIEW
RFQ
3,641
In-stock
Microsemi Corporation MOSFET N-CH 800V 57A SOT-227 POWER MOS 8™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC ISOTOP® 960W (Tc) N-Channel 800V 57A (Tc) 110 mOhm @ 43A, 10V 5V @ 5mA 570nC @ 10V 17550pF @ 25V 10V ±30V
IXFN230N10
RFQ
VIEW
RFQ
3,985
In-stock
IXYS MOSFET N-CH 100V 230A SOT-227B - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227B 700W (Tc) N-Channel 100V 230A (Tc) 6 mOhm @ 500mA, 10V 4V @ 8mA 570nC @ 10V 19000pF @ 25V 10V ±20V