Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TSM60NB900CH C5G
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1,691
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Taiwan Semiconductor Corporation MOSFET N-CHANNEL 600V 4A TO251 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA TO-251 (IPAK) 36.8W (Tc) N-Channel 600V 4A (Tc) 900 mOhm @ 1.2A, 10V 4V @ 250µA 9.6nC @ 10V 315pF @ 100V 10V ±30V
FCD3400N80Z
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RFQ
1,366
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ON Semiconductor MOSFET N-CH 800V 2A DPAK SuperFET® II Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 32W (Tc) N-Channel 800V 2A (Tc) 3.4 Ohm @ 1A, 10V 4.5V @ 200µA 9.6nC @ 10V 400pF @ 100V 10V ±20V
FCD3400N80Z
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RFQ
3,396
In-stock
ON Semiconductor MOSFET N-CH 800V 2A DPAK SuperFET® II Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 32W (Tc) N-Channel 800V 2A (Tc) 3.4 Ohm @ 1A, 10V 4.5V @ 200µA 9.6nC @ 10V 400pF @ 100V 10V ±20V
FCD3400N80Z
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RFQ
1,130
In-stock
ON Semiconductor MOSFET N-CH 800V 2A DPAK SuperFET® II Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 32W (Tc) N-Channel 800V 2A (Tc) 3.4 Ohm @ 1A, 10V 4.5V @ 200µA 9.6nC @ 10V 400pF @ 100V 10V ±20V
FCU3400N80Z
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RFQ
3,171
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ON Semiconductor MOSFET N-CH 800V 2A IPAK SuperFET® II Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 32W (Tc) N-Channel 800V 2A (Tc) 3.4 Ohm @ 1A, 10V 4.5V @ 200µA 9.6nC @ 10V 400pF @ 100V 10V ±20V
TSM60NB900CP ROG
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RFQ
2,614
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Taiwan Semiconductor Corporation MOSFET N-CHANNEL 600V 4A TO252 - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252, (D-Pak) 36.8W (Tc) N-Channel 600V 4A (Tc) 900 mOhm @ 1.2A, 10V 4V @ 250µA 9.6nC @ 10V 315pF @ 100V 10V ±30V
TSM60NB900CP ROG
RFQ
VIEW
RFQ
2,306
In-stock
Taiwan Semiconductor Corporation MOSFET N-CHANNEL 600V 4A TO252 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252, (D-Pak) 36.8W (Tc) N-Channel 600V 4A (Tc) 900 mOhm @ 1.2A, 10V 4V @ 250µA 9.6nC @ 10V 315pF @ 100V 10V ±30V
TSM60NB900CP ROG
RFQ
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RFQ
2,061
In-stock
Taiwan Semiconductor Corporation MOSFET N-CHANNEL 600V 4A TO252 - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252, (D-Pak) 36.8W (Tc) N-Channel 600V 4A (Tc) 900 mOhm @ 1.2A, 10V 4V @ 250µA 9.6nC @ 10V 315pF @ 100V 10V ±30V