Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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DMT6010SCT
RFQ
VIEW
RFQ
780
In-stock
Diodes Incorporated MOSFET N-CHA 60V 98A TO220 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 2.3W (Ta), 104W (Tc) N-Channel - 60V 98A (Tc) 7.2 mOhm @ 20A, 10V 4V @ 250µA 36.3nC @ 10V 1940pF @ 30V 10V ±20V
STY100NM60N
RFQ
VIEW
RFQ
2,958
In-stock
STMicroelectronics MOSFET N CH 600V 98A MAX247 MDmesh™ II Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 MAX247™ 625W (Tc) N-Channel - 600V 98A (Tc) 29 mOhm @ 49A, 10V 4V @ 250µA 330nC @ 10V 9600pF @ 50V 10V 25V
IXFX98N50P3
RFQ
VIEW
RFQ
2,261
In-stock
IXYS MOSFET N-CH 500V 98A PLUS247 HiPerFET™, Polar3™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PLUS247™-3 1300W (Tc) N-Channel - 500V 98A (Tc) 50 mOhm @ 500mA, 10V 5V @ 8mA 197nC @ 10V 13100pF @ 25V 10V ±30V
IXFK98N50P3
RFQ
VIEW
RFQ
777
In-stock
IXYS MOSFET N-CH 500V 98A TO264 HiPerFET™, Polar3™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA TO-264AA (IXFK) 1300W (Tc) N-Channel - 500V 98A (Tc) 50 mOhm @ 500mA, 10V 5V @ 8mA 197nC @ 10V 13100pF @ 25V 10V ±30V