Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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FQPF5N80
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1,488
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ON Semiconductor MOSFET N-CH 800V 2.8A TO-220F QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 47W (Tc) N-Channel - 800V 2.8A (Tc) 2.6 Ohm @ 1.4A, 10V 5V @ 250µA 33nC @ 10V 1250pF @ 25V 10V ±30V
AOTF3N80
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3,584
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Alpha & Omega Semiconductor Inc. MOSFET N-CH 800V 2.8A TO220F - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220-3F 35W (Tc) N-Channel - 800V 2.8A (Tc) 4.8 Ohm @ 1.5A, 10V 4.5V @ 250µA 10nC @ 10V 510pF @ 25V 10V ±30V
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RFQ
2,990
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Vishay Siliconix MOSFET N-CHAN 800V TO-220 FULLPA E Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220 Full Pack 29W (Tc) N-Channel - 800V 2.8A (Tc) 2.75 Ohm @ 1A, 10V 4V @ 250µA 19.6nC @ 10V 315pF @ 100V 10V ±30V
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2,822
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Vishay Siliconix MOSFET N-CHAN 800V TO-220 FULLPA E Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220 Full Pack 29W (Tc) N-Channel - 800V 2.8A (Tc) 2.75 Ohm @ 1A, 10V 4V @ 250µA 19.6nC @ 10V 315pF @ 100V 10V ±30V
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2,380
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Vishay Siliconix MOSFET N-CHAN 800V TO-220 FULLPA E Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220 Full Pack 29W (Tc) N-Channel - 800V 2.8A (Tc) 2.75 Ohm @ 1A, 10V 4V @ 250µA 19.6nC @ 10V 315pF @ 100V 10V ±30V
SIHD2N80E-GE3
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RFQ
2,971
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Vishay Siliconix MOSFET N-CH 800V 2.8A DPAK E Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-PAK (TO-252AA) 62.5W (Tc) N-Channel - 800V 2.8A (Tc) 2.75 Ohm @ 1A, 10V 4V @ 250µA 19.6nC @ 10V 315pF @ 100V 10V ±30V
SIHD2N80E-GE3
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RFQ
2,108
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Vishay Siliconix MOSFET N-CH 800V 2.8A DPAK E Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-PAK (TO-252AA) 62.5W (Tc) N-Channel - 800V 2.8A (Tc) 2.75 Ohm @ 1A, 10V 4V @ 250µA 19.6nC @ 10V 315pF @ 100V 10V ±30V
SIHD2N80E-GE3
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RFQ
2,342
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Vishay Siliconix MOSFET N-CH 800V 2.8A DPAK E Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-PAK (TO-252AA) 62.5W (Tc) N-Channel - 800V 2.8A (Tc) 2.75 Ohm @ 1A, 10V 4V @ 250µA 19.6nC @ 10V 315pF @ 100V 10V ±30V
SIHU2N80E-GE3
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RFQ
2,510
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Vishay Siliconix MOSFET N-CH 800V 2.8A IPAK E Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Long Leads, IPak, TO-251AB IPAK (TO-251) 62.5W (Tc) N-Channel - 800V 2.8A (Tc) 2.75 Ohm @ 1A, 10V 4V @ 250µA 19.6nC @ 10V 315pF @ 100V 10V ±30V