Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
GP1M003A080PH
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VIEW
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885
In-stock
Global Power Technologies Group MOSFET N-CH 800V 3A IPAK - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 94W (Tc) N-Channel - 800V 3A (Tc) 4.2 Ohm @ 1.5A, 10V 4V @ 250µA 19nC @ 10V 696pF @ 25V 10V ±30V
IPU80R2K0P7AKMA1
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VIEW
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1,455
In-stock
Infineon Technologies MOSFET N-CH 800V 3A TO251-3 CoolMOS™ P7 Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA PG-TO251-3 24W (Tc) N-Channel - 800V 3A (Tc) 2 Ohm @ 940mA, 10V 3.5V @ 50µA 9nC @ 10V 175pF @ 500V 10V ±20V
STU4N80K5
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1,131
In-stock
STMicroelectronics MOSFET N-CH 800V 3A IPAK SuperMESH5™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA IPAK (TO-251) 60W (Tc) N-Channel - 800V 3A (Tc) 2.5 Ohm @ 1.5A, 10V 5V @ 100µA 10.5nC @ 10V 175pF @ 100V 10V ±30V
TSM3N80CH C5G
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VIEW
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3,732
In-stock
Taiwan Semiconductor Corporation MOSFET N-CHANNEL 800V 3A TO251 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA TO-251 (IPAK) 94W (Tc) N-Channel - 800V 3A (Tc) 4.2 Ohm @ 1.5A, 10V 4V @ 250µA 19nC @ 10V 696pF @ 25V 10V ±30V
STD4NK80Z-1
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VIEW
RFQ
1,439
In-stock
STMicroelectronics MOSFET N-CH 800V 3A IPAK SuperMESH™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 80W (Tc) N-Channel - 800V 3A (Tc) 3.5 Ohm @ 1.5A, 10V 4.5V @ 50µA 22.5nC @ 10V 575pF @ 25V 10V ±30V