- Manufacture :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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2 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
1,030
In-stock
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Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 800V 4A TO220 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 38.7W (Tc) | N-Channel | - | 800V | 4A (Tc) | 3 Ohm @ 1.2A, 10V | 4V @ 250µA | 20nC @ 10V | 955pF @ 25V | 10V | ±30V | |||
|
VIEW |
1,853
In-stock
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STMicroelectronics | N-CHANNEL 800 V, 1.50 OHM TYP., | MDmesh™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 60W (Tc) | N-Channel | - | 800V | 4A (Tc) | 1.75 Ohm @ 2A, 10V | 5V @ 100µA | 5nC @ 10V | 177pF @ 100V | 10V | ±30V | |||
