Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Microsemi Corporation MOSFET N-CH 800V 13A TO247AD POWER MOS IV® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AD 310W (Tc) N-Channel - 800V 13A (Tc) 750 mOhm @ 6.5A, 10V 4V @ 1mA 130nC @ 10V 2950pF @ 25V 10V ±30V
BFL4004
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3,016
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ON Semiconductor MOSFET N-CH 800V 4.3A TO-220F - Obsolete Bulk MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FI(LS) 2W (Ta), 36W (Tc) N-Channel - 800V 4.3A (Ta) 2.5 Ohm @ 3.25A, 10V 4V @ 1mA 36nC @ 10V 710pF @ 30V 10V ±30V
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3,192
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IXYS MOSFET N-CH 800V 13A ISOPLUS220 CoolMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole ISOPLUS220™ ISOPLUS220™ - N-Channel Super Junction 800V 13A (Tc) 290 mOhm @ 9A, 10V 4V @ 1mA 90nC @ 10V 2300pF @ 25V 10V ±20V
BSP300L6327HUSA1
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2,999
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Infineon Technologies MOSFET N-CH 800V 190MA SOT-223 SIPMOS® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel - 800V 190mA (Ta) 20 Ohm @ 190mA, 10V 4V @ 1mA - 230pF @ 25V 10V ±20V