Supplier Device Package :
Power Dissipation (Max) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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GP2M012A080NG
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Global Power Technologies Group MOSFET N-CH 800V 12A TO3PN - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3PN 416W (Tc) N-Channel - 800V 12A (Tc) 650 mOhm @ 6A, 10V 5V @ 250µA 79nC @ 10V 3370pF @ 25V 10V ±30V
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STMicroelectronics MOSFET N-CH 800V 12A TO-247 SuperMESH™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247-3 230W (Tc) N-Channel - 800V 12A (Tc) 650 mOhm @ 6A, 10V 4.5V @ 100µA 155nC @ 10V 3480pF @ 25V 10V ±30V