Packaging :
Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Microsemi Corporation MOSFET N-CH 800V 13A TO247AD POWER MOS IV® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AD 310W (Tc) N-Channel - 800V 13A (Tc) 750 mOhm @ 6.5A, 10V 4V @ 1mA 130nC @ 10V 2950pF @ 25V 10V ±30V
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Microsemi Corporation MOSFET N-CH 800V 40A ISOTOP POWER MOS IV® Obsolete Tray MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC ISOTOP® 690W (Tc) N-Channel - 800V 40A (Tc) 180 mOhm @ 20A, 10V 4V @ 5mA 700nC @ 10V 14000pF @ 25V 10V ±30V