Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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FCP220N80
RFQ
VIEW
RFQ
2,810
In-stock
ON Semiconductor MOSFET N-CH 800V 23A SuperFET® II Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 278W (Tc) N-Channel - 800V 23A (Tc) 220 mOhm @ 11.5A, 10V 4.5V @ 2.3mA 105nC @ 10V 4560pF @ 100V 10V ±20V
FCP850N80Z
RFQ
VIEW
RFQ
3,272
In-stock
ON Semiconductor MOSFET N-CH 800V 8A SuperFET® II Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 136W (Tc) N-Channel - 800V 8A (Tc) 850 mOhm @ 3A, 10V 4.5V @ 600µA 29nC @ 10V 1315pF @ 100V 10V ±20V
FCP650N80Z
RFQ
VIEW
RFQ
3,443
In-stock
ON Semiconductor MOSFET N-CH 800V 10A SuperFET® II Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 162W (Tc) N-Channel - 800V 10A (Tc) 650 mOhm @ 4A, 10V 4.5V @ 800µA 35nC @ 10V 1565pF @ 100V 10V ±20V
FCP290N80
RFQ
VIEW
RFQ
2,887
In-stock
ON Semiconductor MOSFET N-CH 800V 17A TO220 SuperFET® II Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 212W (Tc) N-Channel - 800V 17A (Tc) 290 mOhm @ 8.5A, 10V 4.5V @ 1.7mA 75nC @ 10V 3205pF @ 100V 10V ±20V
FCP400N80Z
RFQ
VIEW
RFQ
1,871
In-stock
ON Semiconductor MOSFET N-CH 800V 14A TO220 SuperFET® II Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 195W (Tc) N-Channel - 800V 14A (Tc) 400 mOhm @ 5.5A, 10V 4.5V @ 1.1mA 56nC @ 10V 2350pF @ 1000V 10V ±20V