- Manufacture :
- Series :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
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3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,337
In-stock
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Microsemi Corporation | MOSFET N-CH 1000V 20A SOT-227 | POWER MOS 8™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | ISOTOP® | 460W (Tc) | N-Channel | - | 1000V | 20A (Tc) | 440 mOhm @ 16A, 10V | 5V @ 2.5mA | 260nC @ 10V | 8500pF @ 25V | 10V | ±30V | ||||
VIEW |
2,178
In-stock
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Microsemi Corporation | MOSFET N-CH 1000V 21A SOT-227 | POWER MOS 8™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | ISOTOP® | 462W (Tc) | N-Channel | - | 1000V | 21A (Tc) | 380 mOhm @ 16A, 10V | 5V @ 2.5mA | 260nC @ 10V | 8500pF @ 25V | 10V | ±30V | ||||
VIEW |
3,246
In-stock
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IXYS | MOSFET N-CH 800V 50A SOT-227B | HiPerFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227B | 1135W (Tc) | N-Channel | - | 800V | 50A (Tc) | 160 mOhm @ 500mA, 10V | 5.5V @ 8mA | 260nC @ 10V | 13500pF @ 25V | 10V | ±30V |