Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXKP24N60C5
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2,441
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IXYS MOSFET N-CH 600V 24A TO220AB CoolMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB - N-Channel Super Junction 600V 24A (Tc) 165 mOhm @ 12A, 10V 3.5V @ 790µA 52nC @ 10V 2000pF @ 100V 10V ±20V
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RFQ
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3,135
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Vishay Siliconix MOSFET N-CH 500V 11A TO220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 170W (Tc) N-Channel - 500V 11A (Tc) 520 mOhm @ 6.6A, 10V 4V @ 250µA 52nC @ 10V 1423pF @ 25V 10V ±30V
IXTP26P10T
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RFQ
756
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IXYS MOSFET P-CH 100V 26A TO-220 TrenchP™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 150W (Tc) P-Channel - 100V 26A (Tc) 90 mOhm @ 13A, 10V 4.5V @ 250µA 52nC @ 10V 3820pF @ 25V 10V ±15V
IRFB11N50A
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RFQ
1,515
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Vishay Siliconix MOSFET N-CH 500V 11A TO-220AB - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 170W (Tc) N-Channel - 500V 11A (Tc) 520 mOhm @ 6.6A, 10V 4V @ 250µA 52nC @ 10V 1423pF @ 25V 10V ±30V
IRFB11N50APBF
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RFQ
1,831
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Vishay Siliconix MOSFET N-CH 500V 11A TO-220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 170W (Tc) N-Channel - 500V 11A (Tc) 520 mOhm @ 6.6A, 10V 4V @ 250µA 52nC @ 10V 1423pF @ 25V 10V ±30V