Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
GP1M016A060F
RFQ
VIEW
RFQ
3,354
In-stock
Global Power Technologies Group MOSFET N-CH 600V 16A TO220F - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 48W (Tc) N-Channel - 600V 16A (Tc) 470 mOhm @ 8A, 10V 4V @ 250µA 53nC @ 10V 3039pF @ 25V 10V ±30V
GP1M016A025FG
RFQ
VIEW
RFQ
3,112
In-stock
Global Power Technologies Group MOSFET N-CH 250V 16A TO220F - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 30.4W (Tc) N-Channel - 250V 16A (Tc) 240 mOhm @ 8A, 10V 5V @ 250µA 19nC @ 10V 944pF @ 25V 10V ±30V
Default Photo
RFQ
VIEW
RFQ
1,531
In-stock
ON Semiconductor MOSFET N-CH 600V 16A TO220F - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 134.4W (Tc) N-Channel - 600V 16A (Tc) 199 mOhm @ 8A, 10V 4V @ 250µA 52.3nC @ 10V 2170pF @ 100V 10V ±30V
FDPF16N50T
RFQ
VIEW
RFQ
2,016
In-stock
ON Semiconductor MOSFET N-CH 500V 16A TO-220F UniFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 38.5W (Tc) N-Channel - 500V 16A (Tc) 380 mOhm @ 8A, 10V 5V @ 250µA 45nC @ 10V 1945pF @ 25V 10V ±30V
FDPF16N50
RFQ
VIEW
RFQ
2,514
In-stock
ON Semiconductor MOSFET N-CH 500V 16A TO-220F UniFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 38.5W (Tc) N-Channel - 500V 16A (Tc) 380 mOhm @ 8A, 10V 5V @ 250µA 45nC @ 10V 1945pF @ 25V 10V ±30V