Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
FQD24N08TM
RFQ
VIEW
RFQ
3,729
In-stock
ON Semiconductor MOSFET N-CH 80V 19.6A DPAK QFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 2.5W (Ta), 50W (Tc) N-Channel - 80V 19.6A (Tc) 60 mOhm @ 9.8A, 10V 4V @ 250µA 25nC @ 10V 750pF @ 25V 10V ±25V
FQD24N08TF
RFQ
VIEW
RFQ
1,963
In-stock
ON Semiconductor MOSFET N-CH 80V 19.6A DPAK QFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 2.5W (Ta), 50W (Tc) N-Channel - 80V 19.6A (Tc) 60 mOhm @ 9.8A, 10V 4V @ 250µA 25nC @ 10V 750pF @ 25V 10V ±25V
FQP9N30
RFQ
VIEW
RFQ
803
In-stock
ON Semiconductor MOSFET N-CH 300V 9A TO-220 QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 98W (Tc) N-Channel - 300V 9A (Tc) 450 mOhm @ 4.5A, 10V 5V @ 250µA 22nC @ 10V 750pF @ 25V 10V ±30V