- Part Status :
- Packaging :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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15 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
1,590
In-stock
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Infineon Technologies | MOSFET N-CH 650V 31.2A TO220 | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | PG-TO220 Full Pack | 34.7W (Tc) | N-Channel | - | 650V | 31.2A (Tc) | 110 mOhm @ 12.7A, 10V | 4.5V @ 1.3mA | 118nC @ 10V | 3240pF @ 100V | 10V | ±20V | |||
|
VIEW |
3,668
In-stock
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Infineon Technologies | MOSFET N-CH 650V 31.2A TO262 | CoolMOS™ | Last Time Buy | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 277.8W (Tc) | N-Channel | - | 650V | 31.2A (Tc) | 110 mOhm @ 12.7A, 10V | 4.5V @ 1.3mA | 118nC @ 10V | 3240pF @ 100V | 10V | ±20V | |||
|
VIEW |
3,127
In-stock
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Infineon Technologies | MOSFET N-CH 700V 31.2A TO220 | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 277.8W (Tc) | N-Channel | - | 700V | 31.2A (Tc) | 110 mOhm @ 12.7A, 10V | 4.5V @ 1.3mA | 118nC @ 10V | 3240pF @ 100V | 10V | ±20V | |||
|
VIEW |
2,489
In-stock
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Vishay Siliconix | MOSFET P-CHAN 20V TSOP6S | TrenchFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 6-TSOP | 4.2W (Tc) | P-Channel | - | 20V | 8A (Ta), 8A (Tc) | 21 mOhm @ 4A, 10V | 1V @ 250µA | 118nC @ 10V | 4085pF @ 50V | 1.8V, 4.5V | ±8V | |||
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VIEW |
847
In-stock
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Vishay Siliconix | MOSFET P-CHAN 20V TSOP6S | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 6-TSOP | 4.2W (Tc) | P-Channel | - | 20V | 8A (Ta), 8A (Tc) | 21 mOhm @ 4A, 10V | 1V @ 250µA | 118nC @ 10V | 4085pF @ 50V | 1.8V, 4.5V | ±8V | |||
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VIEW |
2,295
In-stock
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Vishay Siliconix | MOSFET P-CHAN 20V TSOP6S | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 6-TSOP | 4.2W (Tc) | P-Channel | - | 20V | 8A (Ta), 8A (Tc) | 21 mOhm @ 4A, 10V | 1V @ 250µA | 118nC @ 10V | 4085pF @ 50V | 1.8V, 4.5V | ±8V | |||
|
VIEW |
2,370
In-stock
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Infineon Technologies | MOSFET N-CH 650V 31.2A TO263 | CoolMOS™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 277.8W (Tc) | N-Channel | - | 650V | 31.2A (Tc) | 110 mOhm @ 12.7A, 10V | 4.5V @ 1.3mA | 118nC @ 10V | 3240pF @ 100V | 10V | ±20V | |||
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|
VIEW |
2,696
In-stock
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Infineon Technologies | MOSFET N-CH 650V 31.2A TO263 | CoolMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 277.8W (Tc) | N-Channel | - | 650V | 31.2A (Tc) | 110 mOhm @ 12.7A, 10V | 4.5V @ 1.3mA | 118nC @ 10V | 3240pF @ 100V | 10V | ±20V | |||
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|
VIEW |
2,369
In-stock
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Infineon Technologies | MOSFET N-CH 650V 31.2A TO263 | CoolMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 277.8W (Tc) | N-Channel | - | 650V | 31.2A (Tc) | 110 mOhm @ 12.7A, 10V | 4.5V @ 1.3mA | 118nC @ 10V | 3240pF @ 100V | 10V | ±20V | |||
|
VIEW |
2,012
In-stock
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ON Semiconductor | MOSFET N-CH 40V 31.3A 8-PQFN | PowerTrench® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (5x6) | 2.5W (Ta), 104W (Tc) | N-Channel | - | 40V | 31.3A (Ta), 100A (Tc) | 1.5 mOhm @ 50A, 10V | 4V @ 250µA | 118nC @ 10V | 8725pF @ 20V | 10V | ±20V | |||
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VIEW |
935
In-stock
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ON Semiconductor | MOSFET N-CH 40V 31.3A 8-PQFN | PowerTrench® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (5x6) | 2.5W (Ta), 104W (Tc) | N-Channel | - | 40V | 31.3A (Ta), 100A (Tc) | 1.5 mOhm @ 50A, 10V | 4V @ 250µA | 118nC @ 10V | 8725pF @ 20V | 10V | ±20V | |||
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|
VIEW |
1,907
In-stock
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ON Semiconductor | MOSFET N-CH 40V 31.3A 8-PQFN | PowerTrench® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (5x6) | 2.5W (Ta), 104W (Tc) | N-Channel | - | 40V | 31.3A (Ta), 100A (Tc) | 1.5 mOhm @ 50A, 10V | 4V @ 250µA | 118nC @ 10V | 8725pF @ 20V | 10V | ±20V | |||
|
VIEW |
2,080
In-stock
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STMicroelectronics | POWER MOSFET | MDmesh™ M2 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 450W (Tc) | N-Channel | - | 600V | 68A (Tc) | 40 mOhm @ 34A, 10V | 4V @ 250µA | 118nC @ 10V | 5200pF @ 100V | 10V | ±25V | |||
|
VIEW |
1,175
In-stock
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Infineon Technologies | MOSFET N-CH 650V 31.2A TO247 | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 | 277.8W (Tc) | N-Channel | - | 650V | 31.2A (Tc) | 110 mOhm @ 12.7A, 10V | 4.5V @ 1.3mA | 118nC @ 10V | 3240pF @ 100V | 10V | ±20V | |||
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|
VIEW |
2,523
In-stock
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STMicroelectronics | MOSFET N-CH 600V 68A TO247 | MDmesh™ II Plus | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 450W (Tc) | N-Channel | - | 600V | 68A (Tc) | 40 mOhm @ 34A, 10V | 4V @ 250µA | 118nC @ 10V | 5200pF @ 100V | 10V | ±25V | |||
