Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
SI4413ADY-T1-GE3
RFQ
VIEW
RFQ
2,387
In-stock
Vishay Siliconix MOSFET P-CH 30V 10.5A 8-SOIC TrenchFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 1.5W (Ta) P-Channel - 30V 10.5A (Ta) 7.5 mOhm @ 13A, 10V 3V @ 250µA 95nC @ 5V - 4.5V, 10V ±20V
IXTH6N100D2
RFQ
VIEW
RFQ
3,696
In-stock
IXYS MOSFET N-CH 1000V 6A TO247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 300W (Tc) N-Channel Depletion Mode 1000V 6A (Tc) 2.2 Ohm @ 3A, 0V - 95nC @ 5V 2650pF @ 25V - ±20V
SI4413ADY-T1-E3
RFQ
VIEW
RFQ
1,929
In-stock
Vishay Siliconix MOSFET P-CH 30V 10.5A 8-SOIC TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 1.5W (Ta) P-Channel - 30V 10.5A (Ta) 7.5 mOhm @ 13A, 10V 3V @ 250µA 95nC @ 5V - 4.5V, 10V ±20V
SI4413ADY-T1-E3
RFQ
VIEW
RFQ
3,602
In-stock
Vishay Siliconix MOSFET P-CH 30V 10.5A 8-SOIC TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 1.5W (Ta) P-Channel - 30V 10.5A (Ta) 7.5 mOhm @ 13A, 10V 3V @ 250µA 95nC @ 5V - 4.5V, 10V ±20V
SI4413ADY-T1-E3
RFQ
VIEW
RFQ
2,257
In-stock
Vishay Siliconix MOSFET P-CH 30V 10.5A 8-SOIC TrenchFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 1.5W (Ta) P-Channel - 30V 10.5A (Ta) 7.5 mOhm @ 13A, 10V 3V @ 250µA 95nC @ 5V - 4.5V, 10V ±20V
IXTA6N100D2
RFQ
VIEW
RFQ
3,654
In-stock
IXYS MOSFET N-CH 1000V 6A D2PAK - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (IXTA) 300W (Tc) N-Channel Depletion Mode 1000V 6A (Tc) 2.2 Ohm @ 3A, 0V - 95nC @ 5V 2650pF @ 25V - ±20V
IXTP6N100D2
RFQ
VIEW
RFQ
1,002
In-stock
IXYS MOSFET N-CH 1000V 6A TO220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 300W (Tc) N-Channel Depletion Mode 1000V 6A (Tc) 2.2 Ohm @ 3A, 0V - 95nC @ 5V 2650pF @ 25V - ±20V