Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPW65R420CFDFKSA1
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Infineon Technologies MOSFET N-CH 650V 8.7A TO247 CoolMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PG-TO247-3 83.3W (Tc) N-Channel - 650V 8.7A (Tc) 420 mOhm @ 3.4A, 10V 4.5V @ 340µA 32nC @ 10V 870pF @ 100V 10V ±20V
IPP65R420CFDXKSA1
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3,695
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Infineon Technologies MOSFET N-CH 650V 8.7A TO220 CoolMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO-220-3 83.3W (Tc) N-Channel - 650V 8.7A (Tc) 420 mOhm @ 3.4A, 10V 4.5V @ 340µA 32nC @ 10V 870pF @ 100V 10V ±20V
IPI65R420CFDXKSA1
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2,866
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Infineon Technologies MOSFET N-CH 650V 8.7A TO262 CoolMOS™ Last Time Buy Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 83.3W (Tc) N-Channel - 650V 8.7A (Tc) 420 mOhm @ 3.4A, 10V 4.5V @ 340µA 32nC @ 10V 870pF @ 100V 10V ±20V