- Manufacture :
- Series :
- Part Status :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
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9 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,195
In-stock
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Vishay Siliconix | MOSFET N-CH 200V 2.3A 8-SOIC | TrenchFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 1.5W (Ta) | N-Channel | 200V | 2.3A (Ta) | 130 mOhm @ 3A, 10V | 4V @ 250µA | 30nC @ 10V | - | 6V, 10V | ±20V | |||
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VIEW |
3,950
In-stock
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Vishay Siliconix | MOSFET N-CH 100V 5.9A TO252 | TrenchFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 2.5W (Ta), 56W (Tc) | N-Channel | 100V | 5.9A (Ta), 20A (Tc) | 34 mOhm @ 7A, 10V | 4V @ 250µA | 30nC @ 10V | 1800pF @ 25V | 6V, 10V | ±20V | |||
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VIEW |
2,163
In-stock
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Vishay Siliconix | MOSFET N-CH 200V 2.3A 8-SOIC | TrenchFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 1.5W (Ta) | N-Channel | 200V | 2.3A (Ta) | 130 mOhm @ 3A, 10V | 4V @ 250µA | 30nC @ 10V | - | 6V, 10V | ±20V | |||
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VIEW |
666
In-stock
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Vishay Siliconix | MOSFET N-CH 100V 5A PPAK SO-8 | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 1.9W (Ta) | N-Channel | 100V | 5A (Ta) | 34 mOhm @ 7.8A, 10V | 4V @ 250µA | 30nC @ 10V | - | 6V, 10V | ±20V | |||
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VIEW |
3,886
In-stock
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Infineon Technologies | MOSFET P-CH 30V 39.6A TSDSON-8 | OptiMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TSDSON-8 | 2.1W (Ta), 40W (Tc) | P-Channel | 30V | 9A (Ta), 39.5A (Tc) | 18 mOhm @ 20A, 10V | 3.1V @ 48µA | 30nC @ 10V | 2220pF @ 15V | 6V, 10V | ±25V | |||
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VIEW |
3,001
In-stock
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Infineon Technologies | MOSFET P-CH 30V 39.6A TSDSON-8 | OptiMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TSDSON-8 | 2.1W (Ta), 40W (Tc) | P-Channel | 30V | 9A (Ta), 39.6A (Tc) | 18 mOhm @ 20A, 10V | 3.1V @ 48µA | 30nC @ 10V | 2220pF @ 15V | 6V, 10V | ±25V | |||
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VIEW |
600
In-stock
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Vishay Siliconix | MOSFET N-CH 150V 2.2A 1212-8 | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 | 1.5W (Ta) | N-Channel | 150V | 2.2A (Ta) | 135 mOhm @ 3.4A, 10V | 4V @ 250µA | 30nC @ 10V | - | 6V, 10V | ±20V | |||
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VIEW |
1,017
In-stock
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Vishay Siliconix | MOSFET N-CH 150V 2.2A 1212-8 | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 | 1.5W (Ta) | N-Channel | 150V | 2.2A (Ta) | 135 mOhm @ 3.4A, 10V | 4V @ 250µA | 30nC @ 10V | - | 6V, 10V | ±20V | |||
|
VIEW |
1,566
In-stock
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Vishay Siliconix | MOSFET N-CH 100V 5A PPAK SO-8 | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 1.9W (Ta) | N-Channel | 100V | 5A (Ta) | 34 mOhm @ 7.8A, 10V | 4V @ 250µA | 30nC @ 10V | - | 6V, 10V | ±20V |