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- Current - Continuous Drain (Id) @ 25°C :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,195
In-stock
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Vishay Siliconix | MOSFET N-CH 200V 2.3A 8-SOIC | TrenchFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 1.5W (Ta) | N-Channel | - | 200V | 2.3A (Ta) | 130 mOhm @ 3A, 10V | 4V @ 250µA | 30nC @ 10V | - | 6V, 10V | ±20V | |||
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VIEW |
2,163
In-stock
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Vishay Siliconix | MOSFET N-CH 200V 2.3A 8-SOIC | TrenchFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 1.5W (Ta) | N-Channel | - | 200V | 2.3A (Ta) | 130 mOhm @ 3A, 10V | 4V @ 250µA | 30nC @ 10V | - | 6V, 10V | ±20V | |||
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VIEW |
3,242
In-stock
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Infineon Technologies | MOSFET N-CH 200V 3.8A PQFN | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VQFN Exposed Pad | PQFN (5x6) | 3.6W (Ta), 8.3W (Tc) | N-Channel | - | 200V | 3.8A (Ta), 20A (Tc) | 99.9 mOhm @ 5.8A, 10V | 5V @ 100µA | 30nC @ 10V | 1380pF @ 50V | 10V | ±20V | |||
