Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
SI3867DV-T1-E3
RFQ
VIEW
RFQ
1,829
In-stock
Vishay Siliconix MOSFET P-CH 20V 3.9A 6-TSOP TrenchFET® Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 6-TSOP 1.1W (Ta) P-Channel 20V 3.9A (Ta) 51 mOhm @ 5.1A, 4.5V 1.4V @ 250µA 11nC @ 4.5V - 2.5V, 4.5V ±12V
SI3867DV-T1-E3
RFQ
VIEW
RFQ
2,671
In-stock
Vishay Siliconix MOSFET P-CH 20V 3.9A 6-TSOP TrenchFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 6-TSOP 1.1W (Ta) P-Channel 20V 3.9A (Ta) 51 mOhm @ 5.1A, 4.5V 1.4V @ 250µA 11nC @ 4.5V - 2.5V, 4.5V ±12V
SI3867DV-T1-E3
RFQ
VIEW
RFQ
1,900
In-stock
Vishay Siliconix MOSFET P-CH 20V 3.9A 6-TSOP TrenchFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 6-TSOP 1.1W (Ta) P-Channel 20V 3.9A (Ta) 51 mOhm @ 5.1A, 4.5V 1.4V @ 250µA 11nC @ 4.5V - 2.5V, 4.5V ±12V
SI3867DV-T1-GE3
RFQ
VIEW
RFQ
866
In-stock
Vishay Siliconix MOSFET P-CH 20V 3.9A 6-TSOP TrenchFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 6-TSOP 1.1W (Ta) P-Channel 20V 3.9A (Ta) 51 mOhm @ 5.1A, 4.5V 1.4V @ 250µA 11nC @ 4.5V - 2.5V, 4.5V ±12V