Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
SI3459DV-T1-E3
RFQ
VIEW
RFQ
2,850
In-stock
Vishay Siliconix MOSFET P-CH 60V 2.2A 6-TSOP TrenchFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 6-TSOP 2W (Ta) P-Channel - 60V 2.2A (Tc) 220 mOhm @ 2.2A, 10V 1V @ 250µA (Min) 14nC @ 10V - 4.5V, 10V ±20V
BSL305SPEH6327XTSA1
RFQ
VIEW
RFQ
1,826
In-stock
Infineon Technologies MOSFET P-CH 30V 5.3A TSOP-6 OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 PG-TSOP6-6 2W (Ta) P-Channel - 30V 5.3A (Ta) 45 mOhm @ 5.3A, 10V 2V @ 20µA 14nC @ 10V 939pF @ 15V 4.5V, 10V ±20V
SI3442CDV-T1-GE3
RFQ
VIEW
RFQ
3,326
In-stock
Vishay Siliconix MOSFET N-CH 20V 8A 6TSOP TrenchFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 6-TSOP 1.7W (Ta), 2.7W (Tc) N-Channel - 20V 8A (Tc) 27 mOhm @ 6.5A, 10V 1.5V @ 250µA 14nC @ 10V 335pF @ 10V 2.5V, 10V ±12V