Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Infineon Technologies MOSFET P-CH 30V 5.4A 8-SOIC HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) P-Channel - 30V 5.4A (Ta) 59 mOhm @ 5.4A, 10V 2.4V @ 10µA 14nC @ 10V 386pF @ 25V 4.5V, 10V ±20V
IRLML5203TRPBF
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Infineon Technologies MOSFET P-CH 30V 3A SOT-23 HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 Micro3™/SOT-23 1.25W (Ta) P-Channel - 30V 3A (Ta) 98 mOhm @ 3A, 10V 2.5V @ 250µA 14nC @ 10V 510pF @ 25V 4.5V, 10V ±20V
IRFL024ZTRPBF
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Infineon Technologies MOSFET N-CH 55V 5.1A SOT223 HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 1W (Ta) N-Channel - 55V 5.1A (Ta) 57.5 mOhm @ 3.1A, 10V 4V @ 250µA 14nC @ 10V 340pF @ 25V 10V ±20V
IRLL014NTRPBF
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Infineon Technologies MOSFET N-CH 55V 2A SOT223 HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 1W (Ta) N-Channel - 55V 2A (Ta) 140 mOhm @ 2A, 10V 2V @ 250µA 14nC @ 10V 230pF @ 25V 4V, 10V ±16V