- Part Status :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
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5 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
1,380
In-stock
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STMicroelectronics | MOSFET N-CH 600V 1.4A TO-220 | SuperMESH™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | 45W (Tc) | N-Channel | - | 600V | 1.4A (Tc) | 8 Ohm @ 700mA, 10V | 4.5V @ 50µA | 10nC @ 10V | 170pF @ 25V | 10V | ±30V | |||
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VIEW |
2,092
In-stock
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STMicroelectronics | MOSFET N-CH 950V 2A TO220 | SuperMESH5™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | 45W (Tc) | N-Channel | - | 950V | 2A (Tc) | 5 Ohm @ 1A, 10V | 5V @ 100µA | 10nC @ 10V | 105pF @ 100V | 10V | 30V | |||
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VIEW |
2,530
In-stock
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Infineon Technologies | MOSFET N-CH 800V 4A TO220 | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO-220-3 | 32W (Tc) | N-Channel | Super Junction | 800V | 4A (Tc) | 1.4 Ohm @ 1.4A, 10V | 3.5V @ 70µA | 10nC @ 10V | 250pF @ 500V | 10V | ±20V | |||
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VIEW |
3,715
In-stock
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STMicroelectronics | MOSFET N-CH 1050V 1.5A TO-220AB | MDmesh™ K5 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | 60W (Tc) | N-Channel | - | 1050V | 1.5A (Tc) | 8 Ohm @ 750mA, 10V | 5V @ 100µA | 10nC @ 10V | 115pF @ 100V | 10V | ±30V | |||
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VIEW |
2,624
In-stock
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ON Semiconductor | MOSFET N-CH 200V 6.6A TO-220 | QFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | 63W (Tc) | N-Channel | - | 200V | 6.6A (Tc) | 690 mOhm @ 3.3A, 10V | 5V @ 250µA | 10nC @ 10V | 400pF @ 25V | 10V | ±30V | |||
