- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
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8 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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865
In-stock
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Infineon Technologies | MOSFET N-CH 60V 2.6A | SIPMOS® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | - | 60V | 2.6A (Tj) | 90 mOhm @ 2.6A, 10V | 2V @ 20µA | 20nC @ 10V | 380pF @ 25V | 4.5V, 10V | ±20V | |||
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2,202
In-stock
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ON Semiconductor | MOSFET P-CH 60V 5.7A POWER33 | PowerTrench® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-MLP (3.3x3.3) | 2.1W (Ta), 42W (Tc) | P-Channel | - | 60V | 5.7A (Ta), 13.5A (Tc) | 100 mOhm @ 5.7A, 10V | 3V @ 250µA | 20nC @ 10V | 1055pF @ 30V | 4.5V, 10V | ±20V | |||
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3,714
In-stock
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Texas Instruments | MOSFET N-CH 60V 100A 8SON | NexFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-VSONP (5x6) | 3.2W (Ta), 116W (Tc) | N-Channel | - | 60V | 100A (Ta) | 6.8 mOhm @ 18A, 10V | 2.4V @ 250µA | 20nC @ 10V | 1500pF @ 30V | 4.5V, 10V | ±20V | |||
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2,686
In-stock
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Alpha & Omega Semiconductor Inc. | MOSFET P-CH 60V 4A 8-SOIC | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 3.1W (Ta) | P-Channel | - | 60V | 4A (Ta) | 100 mOhm @ 4A, 10V | 3V @ 250µA | 20nC @ 10V | 1120pF @ 30V | 4.5V, 10V | ±20V | |||
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3,011
In-stock
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Vishay Siliconix | MOSFET N-CH 60V 6A 1212-8 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 | 3.2W (Ta), 19.8W (Tc) | N-Channel | - | 60V | 6A (Tc) | 58 mOhm @ 5.4A, 10V | 3V @ 250µA | 20nC @ 10V | 665pF @ 15V | 4.5V, 10V | ±20V | |||
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2,552
In-stock
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Vishay Siliconix | MOSFET N-CH 60V 6A 1212-8 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 | 3.2W (Ta), 19.8W (Tc) | N-Channel | - | 60V | 6A (Tc) | 58 mOhm @ 5.4A, 10V | 3V @ 250µA | 20nC @ 10V | 665pF @ 15V | 4.5V, 10V | ±20V | |||
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3,565
In-stock
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Texas Instruments | MOSFET N-CH 60V 100A 8SON | NexFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-VSONP (5x6) | 3.2W (Ta), 116W (Tc) | N-Channel | - | 60V | 100A (Ta) | 6.8 mOhm @ 18A, 10V | 2.4V @ 250µA | 20nC @ 10V | 1500pF @ 30V | 4.5V, 10V | ±20V | |||
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VIEW |
3,258
In-stock
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Infineon Technologies | MOSFET P-CH 60V 1.9A SOT223 | SIPMOS® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | P-Channel | - | 60V | 1.9A (Ta) | 300 mOhm @ 1.9A, 10V | 2V @ 460µA | 20nC @ 10V | 460pF @ 25V | 4.5V, 10V | ±20V | |||
