Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IRF7450TRPBF
RFQ
VIEW
RFQ
2,925
In-stock
Infineon Technologies MOSFET N-CH 200V 2.5A 8-SOIC HEXFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 200V 2.5A (Ta) 170 mOhm @ 1.5A, 10V 5.5V @ 250µA 39nC @ 10V 940pF @ 25V 10V ±30V
IRF7450TRPBF
RFQ
VIEW
RFQ
1,072
In-stock
Infineon Technologies MOSFET N-CH 200V 2.5A 8-SOIC HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 200V 2.5A (Ta) 170 mOhm @ 1.5A, 10V 5.5V @ 250µA 39nC @ 10V 940pF @ 25V 10V ±30V
IRF7450TRPBF
RFQ
VIEW
RFQ
3,538
In-stock
Infineon Technologies MOSFET N-CH 200V 2.5A 8-SOIC HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 200V 2.5A (Ta) 170 mOhm @ 1.5A, 10V 5.5V @ 250µA 39nC @ 10V 940pF @ 25V 10V ±30V
IRF5801TRPBF
RFQ
VIEW
RFQ
626
In-stock
Infineon Technologies MOSFET N-CH 200V 600MA 6-TSOP HEXFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 Micro6™(TSOP-6) 2W (Ta) N-Channel - 200V 600mA (Ta) 2.2 Ohm @ 360mA, 10V 5.5V @ 250µA 3.9nC @ 10V 88pF @ 25V 10V ±30V
IRF5801TRPBF
RFQ
VIEW
RFQ
1,753
In-stock
Infineon Technologies MOSFET N-CH 200V 600MA 6-TSOP HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 Micro6™(TSOP-6) 2W (Ta) N-Channel - 200V 600mA (Ta) 2.2 Ohm @ 360mA, 10V 5.5V @ 250µA 3.9nC @ 10V 88pF @ 25V 10V ±30V
IRF5801TRPBF
RFQ
VIEW
RFQ
2,513
In-stock
Infineon Technologies MOSFET N-CH 200V 600MA 6-TSOP HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 Micro6™(TSOP-6) 2W (Ta) N-Channel - 200V 600mA (Ta) 2.2 Ohm @ 360mA, 10V 5.5V @ 250µA 3.9nC @ 10V 88pF @ 25V 10V ±30V