- Manufacture :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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GLOBAL STOCKS | |||||||||||||||||||||||||
VIEW |
2,906
In-stock
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Global Power Technologies Group | MOSFET N-CH 600V 4.2A TO220 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | 98.4W (Tc) | N-Channel | - | 600V | 4.2A (Tc) | 2.1 Ohm @ 2.1A, 10V | 5V @ 250µA | 14nC @ 10V | 658pF @ 25V | 10V | ±30V | ||||
VIEW |
1,380
In-stock
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ON Semiconductor | MOSFET P-CH 500V 1.5A TO-220 | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | 63W (Tc) | P-Channel | - | 500V | 1.5A (Tc) | 10.5 Ohm @ 750mA, 10V | 5V @ 250µA | 14nC @ 10V | 350pF @ 25V | 10V | ±30V | ||||
VIEW |
3,772
In-stock
|
ON Semiconductor | MOSFET P-CH 250V 4A TO-220 | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | 75W (Tc) | P-Channel | - | 250V | 4A (Tc) | 2.1 Ohm @ 2A, 10V | 5V @ 250µA | 14nC @ 10V | 420pF @ 25V | 10V | ±30V |