- Series :
- Part Status :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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9 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
2,205
In-stock
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Vishay Siliconix | MOSFET N-CH 30V 12A PPAK CHIPFET | TrenchFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® ChipFET™ Single | PowerPAK® ChipFet Single | 3.1W (Ta), 31W (Tc) | N-Channel | - | 30V | 12A (Tc) | 16 mOhm @ 7.2A, 10V | 3V @ 250µA | 34nC @ 10V | 1230pF @ 15V | 4.5V, 10V | ±20V | |||
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VIEW |
1,730
In-stock
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Vishay Siliconix | MOSFET N-CH 30V 12A PPAK CHIPFET | TrenchFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® ChipFET™ Single | PowerPAK® ChipFet Single | 3.1W (Ta), 31W (Tc) | N-Channel | - | 30V | 12A (Tc) | 16 mOhm @ 7.2A, 10V | 3V @ 250µA | 34nC @ 10V | 1230pF @ 15V | 4.5V, 10V | ±20V | |||
|
VIEW |
758
In-stock
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Diodes Incorporated | MOSFET N-CH 80V 9A PWRDI5060-8 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PowerDI5060-8 | 2.1W (Ta), 113W (Tc) | N-Channel | - | 80V | 9A (Ta), 65A (Tc) | 17 mOhm @ 12A, 10V | 3V @ 250µA | 34nC @ 10V | 1949pF @ 40V | 4.5V, 10V | ±20V | |||
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VIEW |
3,961
In-stock
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Diodes Incorporated | MOSFET N-CH 80V 9A PWRDI5060-8 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PowerDI5060-8 | 2.1W (Ta), 113W (Tc) | N-Channel | - | 80V | 9A (Ta), 65A (Tc) | 17 mOhm @ 12A, 10V | 3V @ 250µA | 34nC @ 10V | 1949pF @ 40V | 4.5V, 10V | ±20V | |||
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VIEW |
3,710
In-stock
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Diodes Incorporated | MOSFET N-CH 80V 9.5A PWDI3333-8 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | PowerDI3333-8 | 2.2W (Ta), 30W (Tc) | N-Channel | - | 80V | 9.5A (Ta), 35A (Tc) | 16 mOhm @ 12A, 10V | 3V @ 250µA | 34nC @ 10V | 1949pF @ 40V | 6V, 10V | ±20V | |||
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VIEW |
3,596
In-stock
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Diodes Incorporated | MOSFET N-CH 80V 9.5A PWDI3333-8 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | PowerDI3333-8 | 2.2W (Ta), 30W (Tc) | N-Channel | - | 80V | 9.5A (Ta), 35A (Tc) | 16 mOhm @ 12A, 10V | 3V @ 250µA | 34nC @ 10V | 1949pF @ 40V | 6V, 10V | ±20V | |||
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VIEW |
3,568
In-stock
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Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 100V 32A TO252 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 83.3W (Tc) | N-Channel | - | 100V | 32A (Tc) | 37 mOhm @ 10A, 10V | 3V @ 250µA | 34nC @ 10V | 1598pF @ 30V | 4.5V, 10V | ±20V | |||
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VIEW |
1,618
In-stock
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Diodes Incorporated | MOSFET N-CH 80V 9.5A TO252 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | 2.7W (Ta) | N-Channel | - | 80V | 44A (Tc) | 17 mOhm @ 12A, 10V | 3V @ 250µA | 34nC @ 10V | 1949pF @ 40V | 4.5V, 10V | ±20V | |||
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VIEW |
2,079
In-stock
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Diodes Incorporated | MOSFET N-CHA 80V 9.7A SO8 | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 1.5W (Ta) | N-Channel | - | 80V | 9.7A (Ta) | 16.5 mOhm @ 12A, 10V | 3V @ 250µA | 34nC @ 10V | 1949pF @ 40V | 4.5V, 10V | ±20V | |||
