Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
2N7000,126
RFQ
VIEW
RFQ
3,891
In-stock
NXP USA Inc. MOSFET N-CH 60V 300MA TO-92 TrenchMOS™ Obsolete Tape & Box (TB) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) TO-92-3 830mW (Ta) N-Channel 60V 300mA (Tc) 5 Ohm @ 500mA, 10V 2V @ 1mA 40pF @ 10V 4.5V, 10V ±30V
BSN304,126
RFQ
VIEW
RFQ
2,239
In-stock
NXP USA Inc. MOSFET N-CH 300V 300MA SOT54 - Obsolete Tape & Box (TB) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) TO-92-3 1W (Ta) N-Channel 300V 300mA (Ta) 6 Ohm @ 250mA, 10V 2V @ 1mA 120pF @ 25V 2.4V, 10V ±20V
BSN254A,126
RFQ
VIEW
RFQ
3,154
In-stock
NXP USA Inc. MOSFET N-CH 250V 310MA SOT54 - Obsolete Tape & Box (TB) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) TO-92-3 1W (Ta) N-Channel 250V 310mA (Ta) 5 Ohm @ 300mA, 10V 2V @ 1mA 120pF @ 25V 2.4V, 10V ±20V
BSN254,126
RFQ
VIEW
RFQ
3,543
In-stock
NXP USA Inc. MOSFET N-CH 250V 310MA SOT54 - Obsolete Tape & Box (TB) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) TO-92-3 1W (Ta) N-Channel 250V 310mA (Ta) 5 Ohm @ 300mA, 10V 2V @ 1mA 120pF @ 25V 2.4V, 10V ±20V
ZVP4424ASTZ
RFQ
VIEW
RFQ
3,605
In-stock
Diodes Incorporated MOSFET P-CH 240V 0.2A TO92-3 - Active Tape & Box (TB) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole E-Line-3 E-Line (TO-92 compatible) 750mW (Ta) P-Channel 240V 200mA (Ta) 9 Ohm @ 200mA, 10V 2V @ 1mA 200pF @ 25V 3.5V, 10V ±40V