- Series :
- Packaging :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
6 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
1,414
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 100A PQFN5X6 | HEXFET®, StrongIRFET™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-PQFN (5x6) | 125W (Tc) | N-Channel | - | 40V | 100A (Tc) | 1.7 mOhm @ 100A, 10V | 3.7V @ 150µA | 152nC @ 10V | 5406pF @ 25V | 6V, 10V | ±20V | |||
|
|
VIEW |
2,489
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 100A PQFN5X6 | HEXFET®, StrongIRFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-PQFN (5x6) | 125W (Tc) | N-Channel | - | 40V | 100A (Tc) | 1.7 mOhm @ 100A, 10V | 3.7V @ 150µA | 152nC @ 10V | 5406pF @ 25V | 6V, 10V | ±20V | |||
|
|
VIEW |
3,072
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 100A PQFN5X6 | HEXFET®, StrongIRFET™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-PQFN (5x6) | 125W (Tc) | N-Channel | - | 40V | 100A (Tc) | 1.7 mOhm @ 100A, 10V | 3.7V @ 150µA | 152nC @ 10V | 5406pF @ 25V | 6V, 10V | ±20V | |||
|
VIEW |
2,407
In-stock
|
Infineon Technologies | MOSFET N-CH 100V D2PAK-7 | OptiMOS™-5 | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab) | PG-TO263-7 | 313W (Tc) | N-Channel | - | 100V | 180A (Tc) | 1.7 mOhm @ 100A, 10V | 4.1V @ 270µA | 195nC @ 10V | 840pF @ 50V | 10V | ±20V | |||
|
|
VIEW |
964
In-stock
|
Infineon Technologies | MOSFET N-CH 100V D2PAK-7 | OptiMOS™-5 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab) | PG-TO263-7 | 313W (Tc) | N-Channel | - | 100V | 180A (Tc) | 1.7 mOhm @ 100A, 10V | 4.1V @ 270µA | 195nC @ 10V | 840pF @ 50V | 10V | ±20V | |||
|
|
VIEW |
984
In-stock
|
Infineon Technologies | MOSFET N-CH 100V D2PAK-7 | OptiMOS™-5 | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab) | PG-TO263-7 | 313W (Tc) | N-Channel | - | 100V | 180A (Tc) | 1.7 mOhm @ 100A, 10V | 4.1V @ 270µA | 195nC @ 10V | 840pF @ 50V | 10V | ±20V | |||
