Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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BFL4007
RFQ
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RFQ
3,508
In-stock
ON Semiconductor MOSFET N-CH 600V 8.7A TO-220FI - Obsolete Bulk MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FI(LS) 2W (Ta), 40W (Tc) N-Channel - 600V 8.7A (Ta) 680 mOhm @ 7A, 10V 5V @ 1mA 46nC @ 10V 1200pF @ 30V 10V ±30V
IRF7401PBF
RFQ
VIEW
RFQ
753
In-stock
Infineon Technologies MOSFET N-CH 20V 8.7A 8-SOIC HEXFET® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 20V 8.7A (Ta) 22 mOhm @ 4.1A, 4.5V 700mV @ 250µA 48nC @ 4.5V 1600pF @ 15V 2.7V, 4.5V ±12V
IRF7401TRPBF
RFQ
VIEW
RFQ
3,811
In-stock
Infineon Technologies MOSFET N-CH 20V 8.7A 8-SOIC HEXFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 20V 8.7A (Ta) 22 mOhm @ 4.1A, 4.5V 700mV @ 250µA 48nC @ 4.5V 1600pF @ 15V 2.7V, 4.5V ±12V
IRF7401TRPBF
RFQ
VIEW
RFQ
3,086
In-stock
Infineon Technologies MOSFET N-CH 20V 8.7A 8-SOIC HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 20V 8.7A (Ta) 22 mOhm @ 4.1A, 4.5V 700mV @ 250µA 48nC @ 4.5V 1600pF @ 15V 2.7V, 4.5V ±12V
IRF7401TRPBF
RFQ
VIEW
RFQ
2,540
In-stock
Infineon Technologies MOSFET N-CH 20V 8.7A 8-SOIC HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 20V 8.7A (Ta) 22 mOhm @ 4.1A, 4.5V 700mV @ 250µA 48nC @ 4.5V 1600pF @ 15V 2.7V, 4.5V ±12V