Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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STS19N3LLH6
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1,888
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STMicroelectronics MOSFET N-CH 30V 19A 8SOIC DeepGATE™, STripFET™ VI Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.7W (Ta) N-Channel - 30V 19A (Tc) 5.6 mOhm @ 9.5A, 10V 1V @ 250µA 17nC @ 15V 1690pF @ 25V 4.5V, 10V ±20V
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RFQ
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RFQ
3,014
In-stock
Infineon Technologies MOSFET N-CH 650V 19A TO263-3 CoolMOS™ C7 Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-4, D²Pak (3 Leads + Tab), TO-263AA PG-TO263-3 92W (Tc) N-Channel - 650V 19A (Tc) 120 mOhm @ 7.8A, 10V 4V @ 390µA 34nC @ 10V 1500pF @ 400V 10V ±20V
SIHH21N60EF-T1-GE3
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RFQ
3,505
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Vishay Siliconix MOSFET N-CHAN 600V 19A POWERPAK - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PowerPAK® 8 x 8 174W (Tc) N-Channel - 600V 19A (Tc) 185 mOhm @ 11A, 10V 4V @ 250µA 86nC @ 10V 2035pF @ 100V 10V ±30V
SI4840BDY-T1-GE3
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RFQ
3,520
In-stock
Vishay Siliconix MOSFET N-CH 40V 19A 8SOIC TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta), 6W (Tc) N-Channel - 40V 19A (Tc) 9 mOhm @ 12.4A, 10V 3V @ 250µA 50nC @ 10V 2000pF @ 20V 4.5V, 10V ±20V
SI4840BDY-T1-E3
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RFQ
864
In-stock
Vishay Siliconix MOSFET N-CH 40V 19A 8SOIC TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta), 6W (Tc) N-Channel - 40V 19A (Tc) 9 mOhm @ 12.4A, 10V 3V @ 250µA 50nC @ 10V 2000pF @ 20V 4.5V, 10V ±20V
FQB19N20CTM
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RFQ
3,961
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ON Semiconductor MOSFET N-CH 200V 19A D2PAK QFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 3.13W (Ta), 139W (Tc) N-Channel - 200V 19A (Tc) 170 mOhm @ 9.5A, 10V 4V @ 250µA 53nC @ 10V 1080pF @ 25V 10V ±30V