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- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Vgs(th) (Max) @ Id :
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10 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,106
In-stock
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ON Semiconductor | MOSFET P-CH 20V 1.2A SSOT3 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SuperSOT-3 | 500mW (Ta) | P-Channel | 20V | 1.2A (Ta) | 200 mOhm @ 1.3A, 4.5V | 1V @ 250µA | 8.5nC @ 4.5V | 360pF @ 10V | 2.7V, 4.5V | ±8V | ||||
VIEW |
2,047
In-stock
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Infineon Technologies | MOSFET N-CH 20V 1.2A SOT-23 | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Micro3™/SOT-23 | 540mW (Ta) | N-Channel | 20V | 1.2A (Ta) | 250 mOhm @ 930mA, 4.5V | 700mV @ 250µA | 3.9nC @ 4.5V | 110pF @ 15V | 2.7V, 4.5V | ±12V | ||||
VIEW |
2,625
In-stock
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Diodes Incorporated | MOSFET N-CH 20V 1.2A SC59-3 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SC-59-3 | 500mW (Ta) | N-Channel | 20V | 1.2A (Ta) | 100 mOhm @ 500mA, 4.5V | 1.2V @ 1mA | - | 220pF @ 10V | 1.5V, 4.5V | ±8V | ||||
VIEW |
3,890
In-stock
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Nexperia USA Inc. | MOSFET P-CH 20V 1.2A TO-236AB | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) | 335mW (Ta), 2.17W (Tc) | P-Channel | 20V | 1.2A (Ta) | 210 mOhm @ 1.2A, 4.5V | 950mV @ 250µA | 4nC @ 4.5V | 365pF @ 10V | 1.8V, 4.5V | ±8V | ||||
VIEW |
881
In-stock
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ON Semiconductor | MOSFET P-CH 20V 1.2A SC70-6 | PowerTrench® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SC-70-6 | 750mW (Ta) | P-Channel | 20V | 1.2A (Ta) | 180 mOhm @ 1.2A, 4.5V | 1.5V @ 250µA | 5nC @ 4.5V | 330pF @ 10V | 2.5V, 4.5V | ±8V | ||||
VIEW |
2,344
In-stock
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Nexperia USA Inc. | MOSFET N-CH 20V 1.2A XQFN3 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-XFDFN | DFN1006B-3 | 350mW (Ta), 5.43W (Tc) | N-Channel | 20V | 1.2A (Ta) | 320 mOhm @ 1.2A, 4.5V | 950mV @ 250µA | 1.4nC @ 4.5V | 46pF @ 10V | 1.5V, 4.5V | ±8V | ||||
VIEW |
2,969
In-stock
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Nexperia USA Inc. | MOSFET N-CH 20V 1.02A SOT323 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SC-101, SOT-883 | DFN1006-3 | 350mW (Ta), 5.43W (Tc) | N-Channel | 20V | 1.2A (Ta) | 320 mOhm @ 1.2A, 4.5V | 950mV @ 250µA | 1.4nC @ 4.5V | 46pF @ 10V | 1.5V, 4.5V | ±8V | ||||
VIEW |
1,622
In-stock
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Infineon Technologies | MOSFET N-CH 20V 1.2A SOT-23 | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Micro3™/SOT-23 | 540mW (Ta) | N-Channel | 20V | 1.2A (Ta) | 250 mOhm @ 930mA, 4.5V | 700mV @ 250µA | 3.9nC @ 4.5V | 110pF @ 15V | 2.7V, 4.5V | ±12V | ||||
VIEW |
2,111
In-stock
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Diodes Incorporated | MOSFET N-CH 20V 1.2A SC59-3 | - | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SC-59-3 | 500mW (Ta) | N-Channel | 20V | 1.2A (Ta) | 100 mOhm @ 500mA, 4.5V | 1.4V @ 1mA | - | 180pF @ 10V | 2.5V, 4.5V | ±12V | ||||
VIEW |
1,984
In-stock
|
Nexperia USA Inc. | MOSFET P-CH 20V 1.2A 3DFN | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-XDFN Exposed Pad | DFN1010D-3 | 360mW (Ta), 5.68W (Tc) | P-Channel | 20V | 1.2A (Ta) | 447 mOhm @ 1.2A, 4.5V | 950mV @ 250µA | 2.3nC @ 4.5V | 116pF @ 10V | 1.2V, 4.5V | ±8V |