- Part Status :
- Packaging :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
5 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
660
In-stock
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Global Power Technologies Group | MOSFET N-CH 650V 4A TO220 | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | 98.4W (Tc) | N-Channel | 650V | 4A (Tc) | 2.4 Ohm @ 2A, 10V | 5V @ 250µA | 15nC @ 10V | 642pF @ 25V | 10V | ±30V | |||
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VIEW |
996
In-stock
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Global Power Technologies Group | MOSFET N-CH 600V 4A TO220 | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | 86.2W (Tc) | N-Channel | 600V | 4A (Tc) | 2.5 Ohm @ 2A, 10V | 5V @ 250µA | 12nC @ 10V | 545pF @ 25V | 10V | ±30V | |||
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VIEW |
2,193
In-stock
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IXYS | MOSFET N-CH 650V 4A X2 TO-220 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | 32W (Tc) | N-Channel | 650V | 4A (Tc) | 550 mOhm @ 4A, 10V | 5V @ 250µA | 12nC @ 10V | 800pF @ 25V | 10V | ±30V | |||
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VIEW |
1,209
In-stock
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IXYS | MOSFET N-CH 650V 4A X2 TO-220 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | 80W (Tc) | N-Channel | 650V | 4A (Tc) | 850 mOhm @ 2A, 10V | 5V @ 250µA | 8.3nC @ 10V | 455pF @ 25V | 10V | ±30V | |||
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VIEW |
1,235
In-stock
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Diodes Incorporated | MOSFET N CH 650V 4A TO220-3 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | 2.19W (Ta) | N-Channel | 650V | 4A (Tc) | 3 Ohm @ 2A, 10V | 5V @ 250µA | 13.5nC @ 10V | 900pF @ 25V | 10V | ±30V | |||
