Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXTP18N60PM
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3,915
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IXYS MOSFET N-CH TO-220 Polar™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab TO-220 Isolated Tab 90W (Tc) N-Channel 600V 9A (Tc) 420 mOhm @ 9A, 10V 5.5V @ 250µA 49nC @ 10V 2500pF @ 25V 10V ±30V
DMG9N65CTI
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RFQ
859
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Diodes Incorporated MOSFET N CH 650V 9A ITO-220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab ITO-220AB 13W (Tc) N-Channel 650V 9A (Tc) 1.3 Ohm @ 4.5A, 10V 5V @ 250µA 39nC @ 10V 2310pF @ 25V 10V ±30V
TSM9N90ECI C0G
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RFQ
1,953
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Taiwan Semiconductor Corporation MOSFET N-CHANNEL 900V 9A ITO220 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab ITO-220 89W (Tc) N-Channel 900V 9A (Tc) 1.4 Ohm @ 4.5A, 10V 4V @ 250µA 72nC @ 10V 2470pF @ 25V 10V ±30V