- Manufacture :
- Part Status :
- Technology :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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6 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,416
In-stock
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Vishay Siliconix | MOSFET N-CH 600V 17A TO-220AB | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 340W (Tc) | N-Channel | - | 600V | 17A (Tc) | 420 mOhm @ 10A, 10V | 5V @ 250µA | 99nC @ 10V | 2700pF @ 25V | 10V | ±30V | |||
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VIEW |
3,394
In-stock
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Vishay Siliconix | MOSFET N-CH 600V 17A TO-220AB | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 277.8W (Tc) | N-Channel | - | 600V | 17A (Tc) | 340 mOhm @ 8A, 10V | 5V @ 250µA | 90nC @ 10V | 1780pF @ 100V | 10V | ±30V | |||
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VIEW |
678
In-stock
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Vishay Siliconix | MOSFET N-CH 600V 17A TO-220AB | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 277.8W (Tc) | N-Channel | - | 600V | 17A (Tc) | 340 mOhm @ 8A, 10V | 5V @ 250µA | 90nC @ 10V | 1780pF @ 100V | 10V | ±30V | |||
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VIEW |
2,736
In-stock
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Vishay Siliconix | MOSFET N-CH 600V 17A TO-220AB | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 340W (Tc) | N-Channel | - | 600V | 17A (Tc) | 420 mOhm @ 10A, 10V | 5V @ 250µA | 99nC @ 10V | 2700pF @ 25V | 10V | ±30V | |||
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VIEW |
1,075
In-stock
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ON Semiconductor | MOSFET N-CH 600V 17A TO220 | - | Last Time Buy | Tube | GaNFET (Gallium Nitride) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 96W (Tc) | N-Channel | - | 600V | 17A (Tc) | 180 mOhm @ 11A, 8V | 2.6V @ 500µA | 9.3nC @ 4.5V | 760pF @ 480V | 8V | ±18V | |||
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VIEW |
1,691
In-stock
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STMicroelectronics | MOSFET N-CH 600V 17A TO220 | MDmesh™ II | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 125W (Tc) | N-Channel | - | 600V | 17A (Tc) | 190 mOhm @ 8A, 10V | 4V @ 250µA | 46nC @ 10V | 1400pF @ 50V | 10V | ±30V |