Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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BSP613P
RFQ
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RFQ
1,867
In-stock
Infineon Technologies MOSFET P-CH 60V 2.9A SOT-223 SIPMOS® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) P-Channel - 60V 2.9A (Ta) 130 mOhm @ 2.9A, 10V 4V @ 1mA 33nC @ 10V 875pF @ 25V 10V ±20V
BSP613PL6327HUSA1
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VIEW
RFQ
2,102
In-stock
Infineon Technologies MOSFET P-CH 60V 2.9A SOT-223 SIPMOS® Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) P-Channel - 60V 2.9A (Ta) 130 mOhm @ 2.9A, 10V 4V @ 1mA 33nC @ 10V 875pF @ 25V 10V ±20V
BSP613PL6327HUSA1
RFQ
VIEW
RFQ
3,028
In-stock
Infineon Technologies MOSFET P-CH 60V 2.9A SOT-223 SIPMOS® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) P-Channel - 60V 2.9A (Ta) 130 mOhm @ 2.9A, 10V 4V @ 1mA 33nC @ 10V 875pF @ 25V 10V ±20V
BSP613PL6327HUSA1
RFQ
VIEW
RFQ
648
In-stock
Infineon Technologies MOSFET P-CH 60V 2.9A SOT-223 SIPMOS® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) P-Channel - 60V 2.9A (Ta) 130 mOhm @ 2.9A, 10V 4V @ 1mA 33nC @ 10V 875pF @ 25V 10V ±20V
BSC110N06NS3GATMA1
RFQ
VIEW
RFQ
848
In-stock
Infineon Technologies MOSFET N-CH 60V 50A TDSON-8 OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 2.5W (Ta), 50W (Tc) N-Channel - 60V 50A (Tc) 11 mOhm @ 50A, 10V 4V @ 23µA 33nC @ 10V 2700pF @ 30V 10V ±20V
BSC110N06NS3GATMA1
RFQ
VIEW
RFQ
3,800
In-stock
Infineon Technologies MOSFET N-CH 60V 50A TDSON-8 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 2.5W (Ta), 50W (Tc) N-Channel - 60V 50A (Tc) 11 mOhm @ 50A, 10V 4V @ 23µA 33nC @ 10V 2700pF @ 30V 10V ±20V
BSC110N06NS3GATMA1
RFQ
VIEW
RFQ
906
In-stock
Infineon Technologies MOSFET N-CH 60V 50A TDSON-8 OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 2.5W (Ta), 50W (Tc) N-Channel - 60V 50A (Tc) 11 mOhm @ 50A, 10V 4V @ 23µA 33nC @ 10V 2700pF @ 30V 10V ±20V
BSZ110N06NS3GATMA1
RFQ
VIEW
RFQ
2,220
In-stock
Infineon Technologies MOSFET N-CH 60V 20A TSDSON-8 OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN PG-TSDSON-8 2.1W (Ta), 50W (Tc) N-Channel - 60V 20A (Tc) 11 mOhm @ 20A, 10V 4V @ 23µA 33nC @ 10V 2700pF @ 30V 10V ±20V
BSZ110N06NS3GATMA1
RFQ
VIEW
RFQ
2,734
In-stock
Infineon Technologies MOSFET N-CH 60V 20A TSDSON-8 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN PG-TSDSON-8 2.1W (Ta), 50W (Tc) N-Channel - 60V 20A (Tc) 11 mOhm @ 20A, 10V 4V @ 23µA 33nC @ 10V 2700pF @ 30V 10V ±20V
BSZ110N06NS3GATMA1
RFQ
VIEW
RFQ
3,717
In-stock
Infineon Technologies MOSFET N-CH 60V 20A TSDSON-8 OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN PG-TSDSON-8 2.1W (Ta), 50W (Tc) N-Channel - 60V 20A (Tc) 11 mOhm @ 20A, 10V 4V @ 23µA 33nC @ 10V 2700pF @ 30V 10V ±20V
BSP613PH6327XTSA1
RFQ
VIEW
RFQ
2,316
In-stock
Infineon Technologies MOSFET P-CH 60V 2.9A SOT-223 SIPMOS® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) P-Channel - 60V 2.9A (Ta) 130 mOhm @ 2.9A, 10V 4V @ 1mA 33nC @ 10V 875pF @ 25V 10V ±20V
BSP613PH6327XTSA1
RFQ
VIEW
RFQ
2,962
In-stock
Infineon Technologies MOSFET P-CH 60V 2.9A SOT-223 SIPMOS® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) P-Channel - 60V 2.9A (Ta) 130 mOhm @ 2.9A, 10V 4V @ 1mA 33nC @ 10V 875pF @ 25V 10V ±20V
BSP613PH6327XTSA1
RFQ
VIEW
RFQ
3,505
In-stock
Infineon Technologies MOSFET P-CH 60V 2.9A SOT-223 SIPMOS® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) P-Channel - 60V 2.9A (Ta) 130 mOhm @ 2.9A, 10V 4V @ 1mA 33nC @ 10V 875pF @ 25V 10V ±20V