Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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DMT6010SCT
RFQ
VIEW
RFQ
780
In-stock
Diodes Incorporated MOSFET N-CHA 60V 98A TO220 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 2.3W (Ta), 104W (Tc) N-Channel - 60V 98A (Tc) 7.2 mOhm @ 20A, 10V 4V @ 250µA 36.3nC @ 10V 1940pF @ 30V 10V ±20V
DMT6004SCT
RFQ
VIEW
RFQ
1,085
In-stock
Diodes Incorporated MOSFET N-CH 60V 100A TO220-3 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 2.3W (Ta), 113W (Tc) N-Channel - 60V 100A (Tc) 3.65 mOhm @ 100A, 10V 4V @ 250µA 95.4nC @ 10V 4556pF @ 30V 10V ±20V
FDP65N06
RFQ
VIEW
RFQ
785
In-stock
ON Semiconductor MOSFET N-CH 60V 65A TO-220 UniFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 135W (Tc) N-Channel - 60V 65A (Tc) 16 mOhm @ 32.5A, 10V 4V @ 250µA 43nC @ 10V 2170pF @ 25V 10V ±20V
FDP55N06
RFQ
VIEW
RFQ
2,050
In-stock
ON Semiconductor MOSFET N-CH 60V 55A TO-220 UniFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 114W (Tc) N-Channel - 60V 55A (Tc) 22 mOhm @ 27.5A, 10V 4V @ 250µA 37nC @ 10V 1510pF @ 25V 10V ±25V