- Manufacture :
- Series :
- Part Status :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
8 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||
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VIEW |
1,514
In-stock
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Vishay Siliconix | MOSFET N-CH 60V 2.7A SOT223 | - | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 2W (Ta), 3.1W (Tc) | N-Channel | 60V | 2.7A (Tc) | 200 mOhm @ 1.6A, 5V | 2V @ 250µA | 8.4nC @ 5V | 400pF @ 25V | 4V, 5V | ±10V | |||
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VIEW |
1,844
In-stock
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Vishay Siliconix | MOSFET P-CH 60V 1.8A SOT223 | - | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 2W (Ta), 3.1W (Tc) | P-Channel | 60V | 1.8A (Tc) | 500 mOhm @ 1.1A, 10V | 4V @ 250µA | 12nC @ 10V | 270pF @ 25V | 10V | ±20V | |||
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|
VIEW |
2,712
In-stock
|
Vishay Siliconix | MOSFET N-CH 60V 2.7A SOT223 | - | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 2W (Ta), 3.1W (Tc) | N-Channel | 60V | 2.7A (Tc) | 200 mOhm @ 1.6A, 10V | 4V @ 250µA | 11nC @ 10V | 300pF @ 25V | 10V | ±20V | |||
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|
VIEW |
695
In-stock
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Infineon Technologies | MOSFET N-CH 60V 1.6A SOT223 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | 60V | 1.6A (Ta) | 220 mOhm @ 1.6A, 10V | 4V @ 250µA | 8nC @ 10V | 160pF @ 25V | 10V | ±20V | |||
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|
VIEW |
1,622
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 1.6A SOT223 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | 60V | 1.6A (Ta) | 220 mOhm @ 1.6A, 10V | 4V @ 250µA | 8nC @ 10V | 160pF @ 25V | 10V | ±20V | |||
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|
VIEW |
3,159
In-stock
|
Vishay Siliconix | MOSFET N-CH 60V 2.7A SOT223 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 2W (Ta), 3.1W (Tc) | N-Channel | 60V | 2.7A (Tc) | 200 mOhm @ 1.6A, 5V | 2V @ 250µA | 8.4nC @ 5V | 400pF @ 25V | 4V, 5V | ±10V | |||
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|
VIEW |
905
In-stock
|
Vishay Siliconix | MOSFET P-CH 60V 1.8A SOT223 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 2W (Ta), 3.1W (Tc) | P-Channel | 60V | 1.8A (Tc) | 500 mOhm @ 1.1A, 10V | 4V @ 250µA | 12nC @ 10V | 270pF @ 25V | 10V | ±20V | |||
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|
VIEW |
3,709
In-stock
|
Vishay Siliconix | MOSFET N-CH 60V 2.7A SOT223 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 2W (Ta), 3.1W (Tc) | N-Channel | 60V | 2.7A (Tc) | 200 mOhm @ 1.6A, 10V | 4V @ 250µA | 11nC @ 10V | 300pF @ 25V | 10V | ±20V | |||
