- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
2 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GLOBAL STOCKS | |||||||||||||||||||||||||
VIEW |
3,438
In-stock
|
Diodes Incorporated | MOSFETN-CH 100VPOWERDI5060-8 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PowerDI5060-8 | 1.2W (Ta) | N-Channel | 100V | 10.7A (Ta), 113A (Tc) | 8.8 mOhm @ 13A, 10V | 4V @ 250µA | 56.4nC @ 10V | 4.468nF @ 50V | 6V, 10V | ±20V | ||||
VIEW |
1,032
In-stock
|
Diodes Incorporated | MOSFET N-CH 100V 68.8A TO252 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 3W (Ta) | N-Channel | 100V | 68.8A (Tc) | 8.8 mOhm @ 13A, 10V | 3V @ 250µA | 53.7nC @ 10V | 2592pF @ 50V | 6V, 10V | ±20V |