Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
BSP372L6327HTSA1
RFQ
VIEW
RFQ
1,063
In-stock
Infineon Technologies MOSFET N-CH 100V 1.7A SOT-223 SIPMOS® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel - 100V 1.7A (Ta) 310 mOhm @ 1.7A, 5V 2V @ 1mA - 520pF @ 25V 5V ±14V
FQD13N10LTM
RFQ
VIEW
RFQ
967
In-stock
ON Semiconductor MOSFET N-CH 100V 10A DPAK QFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 2.5W (Ta), 40W (Tc) N-Channel - 100V 10A (Tc) 180 mOhm @ 5A, 10V 2V @ 250µA 12nC @ 5V 520pF @ 25V 5V, 10V ±20V