Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Infineon Technologies MOSFET N-CH 100V 5X6 PQFN HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN PQFN (5x6) 3.6W (Ta), 114W (Tc) N-Channel - 100V 11A (Ta), 63A (Tc) 12.4 mOhm @ 37A, 10V 4V @ 100µA 72nC @ 10V 3152pF @ 25V 10V ±20V
SIR846DP-T1-GE3
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Vishay Siliconix MOSFET N-CH 100V 60A PPAK SO-8 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 PowerPAK® SO-8 6.25W (Ta), 104W (Tc) N-Channel - 100V 60A (Tc) 7.8 mOhm @ 20A, 10V 3.5V @ 250µA 72nC @ 10V 2870pF @ 50V 7.5V, 10V ±20V
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Infineon Technologies MOSFET N-CH 100V 100A 8TDSON OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 2.5W (Ta), 139W (Tc) N-Channel - 100V 100A (Tc) 4 mOhm @ 50A, 10V 3.8V @ 95µA 72nC @ 10V 5300pF @ 50V 6V, 10V ±20V
SI7178DP-T1-GE3
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Vishay Siliconix MOSFET N-CH 100V 60A PPAK SO-8 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 PowerPAK® SO-8 6.25W (Ta), 104W (Tc) N-Channel - 100V 60A (Tc) 14 mOhm @ 10A, 10V 4.5V @ 250µA 72nC @ 10V 2870pF @ 50V 10V ±20V