Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
PH20100S,115
RFQ
VIEW
RFQ
2,645
In-stock
Nexperia USA Inc. MOSFET N-CH 100V 34.3A LFPAK TrenchMOS™ Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SC-100, SOT-669 LFPAK56, Power-SO8 62.5W (Tc) N-Channel - 100V 34.3A (Tc) 23 mOhm @ 10A, 10V 4V @ 1mA 39nC @ 10V 2264pF @ 25V 10V ±20V
PSMN035-100LS,115
RFQ
VIEW
RFQ
2,268
In-stock
NXP USA Inc. MOSFET N-CH QFN3333 - Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-VDFN Exposed Pad 8-DFN3333 (3.3x3.3) 65W (Tc) N-Channel - 100V 27A (Tc) 32 mOhm @ 10A, 10V 4V @ 1mA 23nC @ 10V 1350pF @ 50V 10V ±20V
BSP373L6327HTSA1
RFQ
VIEW
RFQ
2,046
In-stock
Infineon Technologies MOSFET N-CH 100V 1.7A SOT-223 SIPMOS® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel - 100V 1.7A (Ta) 300 mOhm @ 1.7A, 10V 4V @ 1mA - 550pF @ 25V 10V ±20V
PMV213SN,215
RFQ
VIEW
RFQ
778
In-stock
Nexperia USA Inc. MOSFET N-CH 100V 1.9A SOT23 TrenchMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 TO-236AB (SOT23) 280mW (Tj) N-Channel - 100V 1.9A (Tc) 250 mOhm @ 500mA, 10V 4V @ 1mA 7nC @ 10V 330pF @ 20V 10V ±30V
BSH114,215
RFQ
VIEW
RFQ
614
In-stock
Nexperia USA Inc. MOSFET N-CH 100V 500MA SOT23 TrenchMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 TO-236AB (SOT23) 360mW (Ta), 830mW (Tc) N-Channel - 100V 500mA (Ta) 500 mOhm @ 500mA, 10V 4V @ 1mA 4.6nC @ 10V 138pF @ 25V 10V ±20V