- Part Status :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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13 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2,194
In-stock
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Infineon Technologies | MOSFET P-CH 100V 0.68A SOT-223 | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | P-Channel | 100V | 680mA (Ta) | 1.8 Ohm @ 680mA, 10V | 2V @ 170µA | 6.4nC @ 10V | 146pF @ 25V | 4.5V, 10V | ±20V | |||
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1,313
In-stock
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Infineon Technologies | MOSFET P-CH 100V 0.68A SOT223 | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | P-Channel | 100V | 680mA (Ta) | 1.8 Ohm @ 680mA, 10V | 2V @ 170µA | 6.4nC @ 10V | 146pF @ 25V | 4.5V, 10V | ±20V | |||
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2,738
In-stock
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Infineon Technologies | MOSFET P-CH 100V 1A SOT-223 | SIPMOS® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | P-Channel | 100V | 1A (Tc) | 800 mOhm @ 1A, 10V | 1V @ 380µA | 16.5nC @ 10V | 372pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
3,222
In-stock
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Infineon Technologies | MOSFET P-CH 100V 0.68A SOT223 | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | P-Channel | 100V | 680mA (Ta) | 1.8 Ohm @ 680mA, 10V | 2V @ 170µA | 6.4nC @ 10V | 146pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
1,264
In-stock
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Diodes Incorporated | MOSFET P-CH 100V 1.7A SOT223 | - | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 2W (Ta) | P-Channel | 100V | 1.7A (Ta) | 350 mOhm @ 1.4A, 10V | 4V @ 250µA | 10.7nC @ 10V | 424pF @ 50V | 6V, 10V | ±20V | |||
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VIEW |
1,693
In-stock
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Diodes Incorporated | MOSFET P-CH 100V SOT223 | Automotive, AEC-Q101 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 2W (Ta) | P-Channel | 100V | 2.4A (Ta) | 350 mOhm @ 1.4A, 10V | 4V @ 250µA | 10.7nC @ 10V | 424pF @ 50V | 6V, 10V | ±20V | |||
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VIEW |
1,133
In-stock
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Infineon Technologies | MOSFET P-CH 100V 0.68A SOT223 | SIPMOS® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | P-Channel | 100V | 680mA (Ta) | 1.8 Ohm @ 680mA, 10V | 2V @ 170µA | 6.4nC @ 10V | 146pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
2,941
In-stock
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Diodes Incorporated | MOSFET P-CH 100V 2.3A SOT223 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 2W (Ta), 13.7W (Tc) | P-Channel | 100V | 2.3A (Ta), 6A (Tc) | 250 mOhm @ 5A, 10V | 3V @ 250µA | 17.5nC @ 10V | 1239pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
1,986
In-stock
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ON Semiconductor | MOSFET P-CH 100V 1A SOT-223 | QFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223-4 | 2W (Tc) | P-Channel | 100V | 1A (Tc) | 1.05 Ohm @ 500mA, 10V | 4V @ 250µA | 8.2nC @ 10V | 250pF @ 25V | 10V | ±30V | |||
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VIEW |
3,434
In-stock
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Diodes Incorporated | MOSFET P-CH 100V 2.3A/6A SOT223 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 2W (Ta), 13.7W (Tc) | P-Channel | 100V | 2.3A (Ta), 6A (Tc) | 250 mOhm @ 5A, 10V | 3V @ 250µA | 17.5nC @ 10V | 1239pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
3,170
In-stock
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Diodes Incorporated | MOSFET P-CH 100V 0.31A SOT223 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 2W (Ta) | P-Channel | 100V | 310mA (Ta) | 8 Ohm @ 375mA, 10V | 3.5V @ 1mA | - | 100pF @ 25V | 10V | ±20V | |||
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VIEW |
3,266
In-stock
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Diodes Incorporated | MOSFET P-CH 100V 2.6A SOT223 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 2W (Ta) | P-Channel | 100V | 2.6A (Ta) | 150 mOhm @ 2.8A, 10V | 4V @ 250µA | 26.9nC @ 10V | 1055pF @ 50V | 6V, 10V | ±20V | |||
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VIEW |
3,881
In-stock
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Vishay Siliconix | MOSFET P-CH 100V 1.1A SOT223 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 2W (Ta), 3.1W (Tc) | P-Channel | 100V | 1.1A (Tc) | 1.2 Ohm @ 660mA, 10V | 4V @ 250µA | 8.7nC @ 10V | 200pF @ 25V | 10V | ±20V | |||
